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Large-area graphene thin films are prized in flexible and transparent devices. We report on a type of glassy graphene that is in an intermediate state between glassy carbon and graphene and that has high crystallinity but curly lattice planes. A polymer-assisted approach is introduced to grow an ultra-smooth (roughness, <0.7 nm) glassy graphene thin film at the inch scale. Owing to the advantag...

Thin-film elastomers (elastic polymers) have a number of technologically significant applications ranging from sportswear to medical devices. In this work, we demonstrate that graphene can be used to reinforce 20 micron thin elastomer films, resulting in over 50% increase in elastic modulus at a very low loading of 0.1 wt%, while also increasing the elongation to failure. This loading is below ...

Articles you may be interested in Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices Appl. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics Appl. High-performance organic thi...

High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GO dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm(2)), breakdown bias (1.5 × 10(6) V/cm), and good mechanical flexibility. Graphene-based TFTs showed a ho...

Graphene is a promising candidate material for transparent conductive films because of its excellent conductivity and one-carbon-atom thickness. Graphene oxide flakes prepared by Hummers method are typically several microns in size and must be pieced together in order to create macroscopic films. We report a macro-scale thin film fabrication method which employs a three-dimensional (3-D) surfac...

Thin film supercapacitors are produced by using electrochemically exfoliated graphene (G) and wet-chemically produced graphene oxide (GO). Either G/GO/G stacked film or sole GO film are sandwiched by two Au films to make devices, where GO is the dielectric spacer. The addition of graphene film for charge storage can increase the capacitance about two times, compared to the simple Au electrode. ...

Large area thin films of few-layered unfunctionalized graphene platelets are developed with fine control over the thickness. The thin films are obtained by a Langmuir-Blodgett assembly at the interface of graphene solution in N-methyl-2-pyrrolidone (NMP) and water, and their optoelectronic properties and conduction mechanism are investigated in relation to lateral flake size and thin film thick...

Resistive random access memory (ReRAM) devices have been extensively investigated resulting in significant enhancement of switching properties. However fluctuations in switching parameters are still critical weak points which cause serious failures during 'reading' and 'writing' operations of ReRAM devices. It is believed that such fluctuations may be originated by random creation and rupture o...

Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large-area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly...