نتایج جستجو برای: gunn diode

تعداد نتایج: 22023  

2005
A Bhattacharya S Chatterjee

Microwave systems like radar, missile guidance and communication equipment which require large amplifiers to produce high power beam, wave-guides for its low loss and higher power capabilities and motors for scanning are bulky, occupy large space and are not easily routed. Most efficient replacements have been found in the active antenna array where active devices are integrated directly into t...

2013
Somnath Chatterjee B. N. Biswas

To find the optimum location of an active device i.e., Gunn diode in the Active tapered Slot-Ring Antenna (ASRA) equivalent {ABCD} matrix parameters has been used, so that the best performance in antenna characteristics is realized in terms of power radiated and power received. Microstrip tapered slotring antenna was fabricated by using a 0.787mm thick Takonic TLY-5-0310-CH/CH substrate with r...

2016
GABRIEL NOVICK

Absntrct -Combiners were developed using two Gunn diodes in dielecpackaged IMPATT diodes giving 10.5-W CW output at 9.1 tric waveguide jimage line) oscillator circuits. The optimum configuration GHz. He coupled individual coaxial oscillators to a main consisted of each Gunn diode being imbedded in a separate dielectric cavity cavity from which the energy was extracted. He further I.Aas a primar...

2006
Arno Förster Jürgen Stock Simone Montanari Mihail Ion Lepsa Hans Lüth

GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The...

Journal: :IEEE Electron Device Letters 2007

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه علم و صنعت ایران - دانشکده مهندسی برق 1384

دیود گان یکی از مهمترین ادوات نیمه هادی مایکروویو محسوب می شود که برای تولید و تقویت توان در محدوده پایین و متوسط، و فرکانس ighz تا بیش از 100ghz بکار گرفته می شود ویژگی های مثبت باعث استفاده گسترده از آن در نواحی مدارهای مایکروویو برای کاربردهای گوناگون شده است. این دیودها از نیمه هادی معدودی مانند inp, gaas و gan با ساختار باند انرژی ویژه قابل ساختند و روش های مختلف رونشانی برای ساخت آن ها ...

1998
ZORANA B. POPOVIC DAVID B. RUTLEDGE

Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state devices in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not need an external locking signal, and the combining is done in free space. The loaded grid i...

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