Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films ...

In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room temperature. The influence of the Ga content on the film's optoelectronic properties as well as the film's electrical stability were investigated. The results showed that the film's crystallinity degraded with increasing Ga content. The film's conductivity was first enhanced due to the replacement ...

High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to i...

Gallium doped zinc oxide (GZO) thin films have been prepared by a simple sol–gel spin coating technique. XRD results showed the preferential c-axis orientation of the crystallites and the presence of the wurtzite phase of ZnO. A lowest resistivity of 3.3 × 10−3 cm was obtained for the ZnO film doped with 2 at% of Ga after post-annealing at 500 ◦C for 45 min in a H2 atmosphere. All the films sho...

The group-III elements, such as Al, Ga and In, are possible dopants for ZnO to improve the electric conductivity of ZnO thin film. Since Ga has lower cost than In and has higher oxidation resistance than Al, it becomes the preferred dopants for ZnO thin film for transparent conducting oxide (TCO) application. In the research, we used MOCVD method with Ga doping to prepare the Ga-doped ZnO thin ...

In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p( + )-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale patterns on either the a-Si(i) or p( + )-Si surface. As compared with the planar n-GZO/p( + )-Si diode, the devices with nanopatterned a-Si(i) and nanopatterned p( + )-Si substrates show a 32% and 36.2% enhancement of photoresponsivity. Furthe...

Rare-earth zirconates are proven to be very effective in restricting the CMAS attack against thermal barrier coatings (TBCs) by forming quick crystalline reaction products that seal porosity infiltration. The microstructural effects on efficacy of Electron Beam-Physical Vapor Deposition gadolinium zirconate (EB-PVD GZO) explored this study. Four distinct GZO microstructures were manufactured an...

Gallium doped zinc oxide, GZO, thin films have been deposited onto glass substrate by rf magnetron sputtering at various substrate temperatures. The electrical and optical properties of the thin films have been studied as a function of substrate temperature. X-ray diffraction was used in order to investigate thin film structures. The thin film structure was stabilised by heating the samples in ...

In the pursuit of high injection current diode nanodevices, entire one-dimensional (1D) ZnO coaxial nanostructures with p-n homojunctions is one of the ideal structures. In this study, we synthesized entire 1D ZnO-based coaxial homojunction diodes with p-type Ag-doped ZnO (SZO) nanostructure shells covering n-type Ga-doped ZnO (GZO) nanopagoda (NPG) cores by a metal-organic chemical vapor depos...