Electrical carrier separation from a photoexcited photochromic molecule could be a promising method for controlling the photosensitivity of such a molecule. We report an efficient carrier separation from a photochromic diarylethene (DAE) molecule by adopting a device structure with a heterojunction consisting of an n-type diarylethene layer and a p-type layer of N,N'-di(1-naphthyl)-N,N'-dipheny...

This paper presents an improved InGaP/GaAs heterojunction bipolar transistor (HBT) model based on the Vertical Bipolar Inter-Company (VBIC) model. New transport current expression is proposed by considering the heterojunction effect. Collector capacitance is developed due to the mobile charge modulation, and the transit time formula is improved to account for electron velocity variation with th...

The heterojunction effects of TiO2 nanotubes on photoconductive characteristics were investigated. For ITO/TiO2/Si diodes, the photocurrent is controlled either by the TiO2/Si heterojunction (p-n junction) or the ITO-TiO2 heterojunction (Schottky contact). In the short circuit (approximately 0 V) condition, the TiO2-Si heterojunction dominates the photocarrier transportation direction due to it...

Fabrication of a monocrystalline silicon based heterojunction film at room-temperature in a time-efficient manner is desirable for energy and environmental considerations. In this report, a gas-solid phase direct elemental reaction (DER) route to realize this aim by firstly depositing an elemental copper layer on a monocrystalline silicon surface followed by a reaction with iodine vapor is desc...

With an amorphous silicon (a-Si:H)/crystalline silicon (c-Si) heterojunction structure, the heterojunction with intrinsic thin-layer (HIT) solar cell has become one of the most promising technologies for c-Si based solar cells. By replacing a-Si:H thin films with appropriate compound semiconductors, we propose novel heterojunction structures which allow c-Si heterojunction solar cells to posses...

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...