We report on a demonstration of GaN digital circuits implemented in a first generation GaN digital technology, which has yielded circuits of considerable complexity. We have implemented simple logic blocks, comparators, ring-oscillators and frequency dividers. We have yielded a 31-stage ring-oscillator using 217 transistors [1]. As a result of unique material characteristics GaN digital control...

Al 05 Ga 0.5 N/n-Al 0.3 0.7 N/AlN metal-oxide-semiconductor heterostructure field- effect transistors (MOS-HFETs), grown on a SiC substrate, with composite 2 O 3 /in situ SiN passivation and gate dielectric are investigated. 20 nm thick high-k was deposited by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. Comparative studies between an in SiN-passivated Schottky-gate HFE...

-Recent developments in ultra-low-noise, cryogenically-cooled, heterostructure field-effect transistor (HFET’s) receivers for frequencies up to 110 GHz are reviewed. Design and examples of the realization of InP HFET receivers in the frequency range 18 to 110 GHz are described. Applications to ultra-low-noise radio astronomy receivers, as well as broadband continuum radiometers, are discussed.

SUMMARY Current collapse of AlGaN/GaN heterostructure field-effect transistors (HFETs) formed on qualified epitaxial layers on Si sub-strates was successfully suppressed using graded field-plate (FP) structures. To improve the reproducibility of the FP structure manufacturing process, a simple process for linearly graded SiO 2 profile formation was developed. An HFET with a graded FP structure ...

We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal–organic chemical vapor deposition (MOCVD). In this study, three different thicknesses β-Ga2O3 dielectric layers were on leading to metal-oxide-semiconductor-HFET or MOSHFET structures. X-ray diffraction (XRD) showed (2¯01) orientation peak...

The source resistance of a heterojunction field-effect transistor ~HFET!, whose reduction is mandatory for high-performance devices, consists of an ohmic contact resistance and an access resistance. The access region is located between the geometrical source and the geometrical source side of the gate contact. By means of a quantum-mechanical modeling program, the effect of changes in layer str...

This study examined the correlation between the off-state leakage current and dynamic on-resistance (RON) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The RON transients in a Schottky-gate HFET (SGHFET) and metal-insulator-semiconductor HFET (MISHFET) were observed after applying various amounts of dr...