نتایج جستجو برای: high electron mobility transistor
تعداد نتایج: 2357262 فیلتر نتایج به سال:
Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment
We show that a cryogenic amplifier composed of homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics our HEMT lead to floor the experimental setup and enable more efficient measurement than available with commercial HEMT. present dc transport properties gain am...
Heteroaromatic oligomer 5,7,12,14-tetrachloro-6,13-diazapentacene (TCDAP) was characterized and assessed as n-channel material in field-effect transistor applications. A single-crystal transistor based on TCDAP as the channel material exhibits a very high electron mobility of 3.39 cm(2) V(-1) s(-1) and an on/off ratio of ∼1.08 × 10(4) respectively.
We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...
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