In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for highK dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs....

Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectr...

High-k dielectric materials are being considered as replacement for SiO2 as the gate dielectric while retaining the low equivalent oxide thickness (EOT) required next generation metal oxide semiconductor field effect transistors (MOSFETs). In this paper, we simulate the capacitance – voltage (C-V) of n-type MOSFET devices with different high-k dielectric insulator numerically. According to the ...

Temperature-dependent Raman and dielectric measurements have been carried out on (C2H5NH3)2CdCl4 single crystals. Raman studies reveal the presence of two structural phase transitions below room temperature at 216 K and 114 K. The phase transitions are marked by anomalies in temperature dependence of wave-number and full width half maximum (FWHM) of several vibrational modes. The transitions ar...

Multi-gate MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high K dielectric materials as oxide layer at different places in MOSFET structures. One of the most impor...