High nitrogen doped 300 mm silicon wafers annealed in 100 % argon ambient were investigated whether modified pulling conditions will lead to improved slip behavior and homogeneous radial oxygen precipitation. It turned out that increasing of the cooling rate during crystal pulling is beneficial on these wafer defect parameters. The void morphology was investigated by TEM and oxygen precipitatio...

OVERVIEW: There is an increased demand for the production of nextgeneration super-high-speed and low-power-consumption CMOS (complementary metal-oxide semiconductor) devices using SOI (silicon on insulator). Major global device manufacturers are actively commercializing this product. In SOI technology, a device is fabricated in a silicon layer (SOI layer) formed on a BOX (buried oxide) film. Al...

Process failures caused by particles in Ultra Pure Water (UPW) are relatively infrequent events, but with the move to 300 mm wafers and 90 nm line widths, they can have significant financial impact. Most particle monitoring strategies in the past focused on the use of the mobile and inline high sensitivity 0.05 micron particle counters. This paper examines the opportunities to improve performan...

Roll-to-roll (RTR) process requires a linear surface treatment source in various processes such as pre-treatment, etching, and deposition. For high speed and large width processes the linear source should have superior characteristics that can be applied to 100~300 m/mim process and large width treatment up to 2 m. Several linear surface treatment sources have been proposed to the RTR process. ...

water deficit stress is the most important environmental constraint for growth, yield and productivity of crops, including the oil seed crops. this study was aimed at studying the influence of differing irrigation régimes on growth, chlorophyll , proline and some antioxidants content along with grain yield, yield components and oil content of sesame genotypes using a 4-replicate split plot rand...

Abstract The quality of the semiconductor–barrier interface plays a pivotal role in demonstration high reproducible quantum dots for information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates order to investigate device quality. For devices fabricated full complementary metal oxide semiconductor (CMOS) process and very thin below thickness 10 nm, report r...