By means of the Mossbauer Effect a systematic dose and dose rate study has been performed on xenon implanted in iron. The substitutional fraction of the xenon nuclei decreases when the implantation dose is increased from 5 X 1011 atoms/cm2 to 1015 atoms/cmz. Two samples were implanted both to a dose of 5 X 1013 atoms/cm* but with a dose rate ratio of 75. The sample with the highest dose rate sh...

The effect of the adsorption Ba atoms with a thickness theta≤3-4 monolayers and implantation + ions an energy E 0 =0.5-2 keV on density states electrons in valence band, parameters bands, emission optical properties Ge(111) has been studied for first time. It is shown that during theta=1 monolayer, value thermoelectric work function φ decreases by ~ 1.9 eV, secondary electron coefficient quantu...

Ion implantation of 0 into Al and growth of Al(0) layers using electron-cyclotron resonance plasma and pulsed laser depositions produce composite alloys with a high density of nanometersize oxide precipitates in an Al matrix. The precipitates impart high strength to the alloy and reduced adhesion during sliding contact, while electrical conductivity and ductility are retained. Implantation of N...

Fluorine (F) implantation with different dose post gate oxidation is used for investigating the performance of saddle-fin (S-Fin) array devices including gate-induced drain leakage (GIDL) and retention fail bit counts. Significantly lower retention fail counts of 35% were achieved in using a medium dosage of F implantation. Additional 18% retention fail count reduction was represented by F impl...

We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electric...

The size evolution of Pb nanoparticles (NPs) synthesized by ion implantation in an epitaxial Al film has been experimentally investigated. The average radius R of Pb NPs was determined as a function of implantation fluence f. The R(f) data were analyzed using various growth models. Our observations suggest that the size evolution of Pb NPs is controlled by the diffusion-limited growth kinetics ...

Abstract We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were into single-crystal Al-polar grown sapphire substrates. By annealing at 1600 °C, silicon atoms diffused the layer, while less change was observed distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. temperatures over ...

Using the methods of Auger electron and photoelectron spectroscopy light absorption spectroscopy, composition, densities state electrons in valence band, parameters energy bands Ge (111) implanted with Na + ions an E 0 =0.5 keV at a dose D sat =6· 10 16 cm -2 thin layer NaGe 2 obtained by annealing ion-implanted Ge. It is shown that narrow n-type band (~ 0.2 eV) appears spectrum after ion impla...