OBJECTIVES The present study was designed to determine whether there is a relationship between indium compound exposure and interstitial lung damage in workers employed at indium tin oxide manufacturing and reclaiming factories in Korea. METHODS In 2012, we conducted a study for the prevention of indium induced lung damage in Korea and identified 78 workers who had serum indium or Krebs von d...

The indium segregation in InGaN well layer is confirmed by a nondestructive combined method of experiment and numerical simulation, which is beyond the traditional method. The pre-deposited indium atoms before InGaN well layer growth are first carried out to prevent indium atoms exchange between the subsurface layer and the surface layer, which results from the indium segregation. The uniform s...

Thin films of indium doped zinc sulfide (ZnS) for different indium (In) concentrations (x=0.0 - 0.8) were deposited onto glass substrate by spray pyrolysis method at 523K temperature. Aqueous solution of zinc acetate, indium chloride and thiorea were used to deposit the In-Zn-S film. The deposited thin films were characterized by Energy dispersive X-ray (EDX), Scanning electron microscopy (SEM)...

The fluxless solderability of pure indium on gold-coated surfaces is investigated in this study using measurements of wetting angle and joint strength. This study focuses on the effects of indium s native oxides and those which form during heat treatment. The initial oxide thicknesses are obtained by heating indium samples at various temperatures, and then, during the reflow above the melting t...

Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric...

Articles you may be interested in A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress Appl. Investigation of zinc interstitial ions as the origin of anomalo...

Indium is a heavy metal belonging to group IIIa. It is believed that indium may interfere with iron metabolism from the sites of absorption, transportation, utilization and storage in the cells. The present investigation was established to study and compare the binding of iron and indium to human apo-transferrin (apo-tf). Pure human apo-tf was used and the binding activity of iron and indium, a...

Indium belongs to Group III A in the periodic table and it is mainly used in the making of thin-film transistor liquid crystal displays (LCDs) for television screens, portable computer screens, pocket telephone displays and video monitors, mainly through the utilization of indiumtin oxide (ITO). ITO is a sintered alloy containing a large portion of indium oxide and a small portion of tin oxide....

In this paper, we present our ab-initio study on energy configurations, minimum energy path (MEP), and migration energy for neutral indium diffusion in a uniaxial and biaxial tensile strained {100} silicon layer. Our abinitio calculation of the electronic structure allowed us to figure out transient atomistic configurations during the indium diffusion in strained silicon. We found that the lowe...