The realization of collector-up light-emitting complementary charge injection transistors is reported. The devices have been implemented in molecular-beam-epitaxy-grown n-InGaAs/ InAlAs/p-InGaAs and n-InGaAs/InP/p-InGaAs heterostructures using a self-aligned process for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or InP) by the real-spa...

In this paper we present the study of features epitaxial growth highly stressed superlattices based on thin InGaAs/InAlAs layers InP substrates by molecular beam epitaxy. It was shown that rates InGaAs and InAlAs bulk lattice-matched to do not allow us precisely determine InAlAs/InGaAs strain compensated error is about 10 percent. The effect related difference in temperatures layers, which affe...

We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and power characteristics of InP/InGaAs HBTs are measured over a wide range of frequencies and bias conditions. A minimum noise figure (FMIN) of 3.5dB, and a gain of 16.8dB are achieved at 10-GHz. These measurement results are the basis for robust nonlinear models of InP/InGaAs HBT devices.

InGaAs is a promising candidate as an n-type channel material for future CMOS due to its superior electron transport properties. Great progress has taken place recently in demonstrating InGaAs MOSFETs for this goal. Among possible InGaAs MOSFET architectures, the recessedgate design is an attractive option due to its scalability and simplicity. In this thesis, a novel selfaligned recessed-gate ...

Hafnium oxide interfaces were studied on two related group III rich semiconductor surfaces, InAs(0 0 1)-(4x2) and In(0.53)Ga(0.47)As(0 0 1)-(4x2), via two different methods: reactive oxidation of deposited Hf metal and electron beam deposition of HfO(2). The interfaces were investigated with scanning tunneling microscopy and spectroscopy (STS). Single Hf atom chemisorption sites were identified...

We have demonstrated high-performance deep-submicron inversion-mode InGaAs MOSFETs with gate lengths down to 150 nm with record Gm exceeding 1.1 mS/μm. Oxide thickness scaling is performed to improve the on-state/off-state performance and Gm is further improved to 1.3 mS/μm. HBr pre-cleaning, retro-grade structure and halo-implantation processes are first time introduced into III-V MOSFETs to s...

Recently, porous materials on the base of semiconductor crystals arouse greater interest as photon crystals in terms of opto-electronic applications and formation of arrays of nano-elements with oneand zero-dimensionality. The crystals of porous silicon have been developed best to date. The obvious trends in this field now are towards using other materials for electrolytic etching, decreasing t...

The high-efficiency capabilities of multijunction laser power converters are demonstrated for high-power applications with an optical input around 1470 nm. InP-based photovoltaic converting III-V semiconductor devices designed here, 10 lattice-matched subcells (PT10-InGaAs/InP), using thin InGaAs absorbing layers connected by transparent tunnel junctions. results confirm that such long-waveleng...

InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL) emission of the InAs/InGaAs DWELL structure. A linear followed by a saturation behavior of the em...

Vertical cavity surface emitting laser (VCSEL) is attractive light source in a future massively parallel computing system with many processor elements (PEs). We proposed optical interconnection by wavelength domain addressing for realizing switch-less and reconfigurable interconnection [1]. For such a system, 1.3 µm VCSEL has advantages over short wavelength VCSEL such as 0.98 µm VCSEL because ...