It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...

Soft X-ray absorption spectroscopy (XAS) has been used to study the influence of Si ion implantation on the passive layer of AISI 304 stainless steel, as well as on its high-temperature oxidation behaviour. Ion implantation is a usual technique to improve the corrosion and oxidation resistance of steels. To study the effects of ion implantation on the room temperature corrosion behavior of AISI...

Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulati...

Ion implanters require high energy to improve the light sensitivity of advanced image sensors with deep photodiode structures. Although ion enable implantation, conditions near wafer surface may differ from those in shallow implantation. As implantation increases, dopant ions are implanted deeper into wafer. Consequently, conventional four-point probe tools inappropriate for measuring electrica...

it has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). due to the optimization, one can also obtain increas...