نتایج جستجو برای: ion sensitive field effect transistor

تعداد نتایج: 2722734  

Journal: :international journal of bio-inorganic hybrid nanomaterials 2015
m. bashirpour

graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. high mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. one of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (gfet). this review selectively su...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شیراز - دانشکده علوم 1387

چکیده ندارد.

Journal: :Analytical sciences : the international journal of the Japan Society for Analytical Chemistry 2001
Y Tsujimura M Yamane S Wakida

A silicone ladder-type polymer was successfully utilized for a matrix of an ion sensing membrane to fabricate an ion-sensitive field-effect transistor. An ion sensing membrane was readily fabricated by mixing a silicone ladder-type oligomer with a quaternary ammonium salt, casting onto the gate of the field-effect transistor, and polymerizing with heating. Since no acid catalysts were needed to...

2017

Submit Manuscript | http://medcraveonline.com Abbreviations: SPR: Surface plasmon resonance; ISFET: Ion Sensitive Field Effect Transistor; EnFET: Enzyme Field Effect Transistor; μTAS: Micro Total Analysis System; HCMV: Human Cytomegalovirus; ELISA: Enzyme-Linked Immunosorbent Assay; CNC: Computer Numerical Control; CAD: Computer Assisted Design; BSA: Bovine Serum Albumin; HPAb: Human Polyclonal...

Journal: :Journal of nanoscience and nanotechnology 2013
Lihong Jiao Nael Barakat

In this work, both the static and dynamic behaviors as well as the signal read-out circuits of ISFETs were studied. The standard NMOS structure in conjunction with the insulator-electrolyte capacitor was used to model the ISFET under study. The site-binding theory was incorporated to describe the chemistry occurring at the insulator/electrolyte interface. The mechanism of the threshold voltage ...

Journal: :Microelectronics Journal 2004
Marcin Janicki Marcin Daniel Michal Szermer Andrzej Napieralski

The proper design and simulation of modern electronic microsystems oriented towards environment monitoring requires accurate models of various ambient sensors. In particular, this paper presents a comprehensive model of an ion sensitive field effect transistor (ISFET). The model can be employed straightforwardly for simulations at device, circuit or system level. First, the model was validated ...

2009
Chang-Soo Lee Sang Kyu Kim Moonil Kim

In recent years there has been great progress in applying FET-type biosensors for highly sensitive biological detection. Among them, the ISFET (ion-sensitive field-effect transistor) is one of the most intriguing approaches in electrical biosensing technology. Here, we review some of the main advances in this field over the past few years, explore its application prospects, and discuss the main...

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