Single particle tracking with a wide field microscope is used to study the solid liquid interface between the viscous liquid tetrakis(2-ethylhexoxy)-silane and a silicon dioxide surface. Silicon dioxide nanoparticles (5 nm diameter) marked with the fluorescent dye rhodamine 6G are used as probes. The distributions of diffusion coefficients, obtained by mean squared displacements, reveal heterog...

This paper aims to fabricated high quality anodic aluminum oxide (AAO) film by anodization method. AAO pore size, pore density, and film thickness can be controlled in 10~500 nm, 10~10 pore.cm, and 1~100 μm. AAO volume and surface area can be computed based on structural parameters such as thickness, pore size, pore density, and sample size. Base on the thetorical calculation, AAO has 100 μm th...

In this research, tellurium (Te) film with thicknesses of 100-250 nm were deposited on ceramic substrates by thermal evaporation at 373 K. The thickness of the film was determined by Rutherford backscattering spectroscopy. The influence of the thickness on the structural, morphological and molecular bonds was characterized using XRD, scanning electron microscope, and Raman spectroscopy. The XRD...

background and aims. microleakage is still one of the major problems of composite-based restorations. this study compared the microleakage and thickness of resin cement in ceramic inlays with various temperatures. materials and methods. class v cavities were prepared on the buccal and lingual aspects of thirty human molars with occlusal margins in enamel and gingival margins in dentin (3 mm wid...

This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness an...

In transmission-reflection method, the microstrip transmission line coated with an organic polymer as an overlay is used to estimate the permittivity of the polymer film. Scattering parameter response of the microstrip line varies as the permittivity of the overlay or its thickness changes. The permittivity is estimated by minimizing the difference between the theoretical (computed from the ana...

This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...

struggling in world's competitive markets, industries are attempting to upgrade their technologies aiming at improving the quality and minimizing the waste and cutting the price. industry tries to develop their technology in order to improve quality via proactive quality control. this paper studies the possible paint quality in order to reduce the defects through neural network techniques in au...

Abstract: Different thickness of Cu2S thin films were prepared by vacuum evaporation under a pressure of 10-6 torr at an evaporation rate of 3Å /sec. Cu2S has direct band gap energy and indirect band gap energy at 1.2eV and 1.8 eV respectively. This paper presents the analysis of structural and optical properties of the Cu2S thin film by X-ray diffractometer (XRD) and UV-Vis-NIR Spectrophotomet...