High-k gate dielectrics are used to suppress excessive transistor gate leakage and power consumption could speed up the introduction of metal gates in complementary metal oxide semiconductor (CMOS) transistors. Many new oxides are being evaluated as gate dielectrics, such as Al2O3, Y2O3, La2O3, Gd2O3, HfO2, ZrO2, and TiO2, BaZrO3, ZrSiO4 and HfSiO4. Ru, RuO2 and SrRuO3 gate electrodes grown on ...

CeO2-, ZrO2-, and La2O3-supported Rh-Pt catalysts were tested to assess their ability to catalyze the steam reforming of ethanol (SRE) for H2 production. SRE activity tests were performed using EtOH:H2O:N2 (molar ratio 1:3:51) at a gaseous space velocity of 70,600 h−1 between 400 and 700 °C at atmospheric pressure. The SRE stability of the catalysts was tested at 700 °C for 27 h time on stream ...

Due to the greenhouse effect, enormous efforts are done for carbon dioxide reduction. By contrast, more attention should be paid for the methane oxidation and conversion, which can help the effective utilization of methane without emission. However, methane conversion and utilization under ambient conditions remains a challenge. Here, this study designs a Co3O4/ZrO2 nanocomposite for the electr...

The effect of dopant species on the sintering resistance zirconia-based ceramics remains a huge challenge in terms both experiment and theory. As one most popular materials for high-temperature protective coatings, it is still urgent to obtain rare earth-doped ZrO2 with high good phase stability. Here, stability earth oxides (La2O3, Nd2O3, Gd2O3, Y2O3)-stabilized zirconia (ZrO2) were thoroughly...

Hybrid nanomaterials based on manganese, cobalt, and lanthanum oxides of different morphology phase compositions were prepared using a facile single-step ultrasonic spray pyrolysis (USP) process tested as electrocatalysts for oxygen reduction reaction (ORR). The structural morphological characterizations completed by XRD SEM-EDS. Electrochemical performance was characterized cyclic voltammetry ...

During atomic layer deposition (ALD) of uniform LayZr1-yOx thin films, spontaneous segregation of ZrO2 nanocrystals takes place that are embedded in an amorphous La2O3 matrix. This occurs if the Zr content in the LayZr1-yOx film is above 30% i.e. if the pulse ratio between the lanthanum precursor and the zirconium precursor is larger than six. We study this clustering phenomena using High resol...