نتایج جستجو برای: like carbon

تعداد نتایج: 922599  

Journal: :J. Comb. Optim. 2000
Boting Yang Cao An Wang

Given an ordinary polyhedron P in the three dimensional Euclidean space, diierent tetrahedralizations of P may contain diierent numbers of tetrahedra. Minimal tetrahedralization is a tetrahedralization with the minimum number of tetrahedra. In this paper, we present some properties of the graph of polyhedra. Then we identify a class of polyhedra and show that this kind of polyhedra can be minim...

2017
L. Sun Hua-Kun Liu D. H. Bradhurst S. X. Dou G. X. Wang H. K Liu

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

Journal: Journal of Nanoanalysis 2017
karim Zare, Mahmood Ghoranneviss Morasa Amani Malkeshi Omid moradi Zohreh Ghorannevis

Using DC-Plasma Enhanced Chemical Vapour Deposition (PECVD) system, the impact of pure Co onthe growth of diamond-like carbon (DLC) nano-structures were investigated. In this study, Acetylene(C2H2) was diluted in H2 and used as the reaction gas and Cobalt (Co) nano-particles were used asthe catalyst. The effect of preparing Co catalyst at temperatures of 240°C and 350°C and growthconditions was...

This study, investigates the effect of bias voltage on structural changes of diamond-like carbon thin film created by ion beam deposition is investigated. For this purpose, the bias voltage in the values of 0 V, -50 V, -100 V and -150 V on the AA5083 aluminum alloy was considered. Raman spectroscopy was used to evaluate structural. Influence of the bias voltage on the thickness and roughness of...

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

Journal: :Materials Science and Engineering: R: Reports 2002

2013
Tim Kunze Matthias Posselt Sibylle Gemming Gotthard Seifert Andrew R. Konicek Robert W. Carpick Lars Pastewka Michael Moseler

Wear in self-mated tetrahedral amorphous carbon (ta-C) films is studied by molecular dynamics and nearedge X-ray absorption fine structure spectroscopy. Both theory and experiment demonstrate the formation of a soft amorphous carbon (a-C) layer with increased sp content, which grows faster than an a-C tribolayer found on selfmated diamond sliding under similar conditions. The faster sp ! sp tra...

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