N-type all-back-contact (ABC) silicon solar cells incorporating a simple oxide-nitride passivation scheme are presently being developed at the Australian National University. Having already achieved promising efficiencies with planar ABC cells [1], this work analyses the cell performance after integrating a surface texturing step into the process flow. Although the textured cells have significa...

In situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films by low pressure chemical vapor deposition (LPCVD) were studied in this work for the fabrication of poly-Si passivating contacts. doping was targeted enabling full potential high-throughput LPCVD technique, as it could allow leaner industrial solar cells featuring contacts than more common ex routes. By careful optimization tem...

The ultra-high vacuum chemical vapor deposition (UHVCVD) system can deposit poly-Si film without any laser or furnace annealing. The uniformity of threshold voltage and mobility is superior to that deposited by low-pressure chemical vapor deposition (LPCVD) system. However, due to the deposition in polycrystalline phase for UHVCVD, the film surface is rough and results in low field effect mobil...

In this article, the role of kinetics, in particular, the pressure of the reaction chamber in the chemical vapor deposition (CVD) synthesis of graphene using low carbon solid solubility catalysts (Cu), on both the large area thickness uniformity and the defect density are presented. Although the thermodynamics of the synthesis system remains the same, based on whether the process is performed a...

Surface roughness is one of the crucial factors in silicon fusion bonding. Due to the enhanced surface roughness, it is almost impossible to bond wafers after KOH etching. This also applies when wafers are heavily doped, have a thick LPCVD silicon nitride layer on top or have a LPCVD polysilicon layer of poor quality. It has been demonstrated that these wafers bond spontaneously after a very br...

A simple classification scheme of low pressure chemical vapor deposition processes is discussed which is based on only three different one-dimensional models of the radii film thickness distribution on silicon wafers processed in a conventionaI horizontal hot-wall reactor. Comparing Lhmretical predictions of these models with experimental results obtained from various LPCVD processes, a good qu...

Silicon nitride was deposited from disilane and ammonia reactant gases under LPCVD conditions and at temperatures around 600 OC. The growth rate was studied experimentally on 4 and 5-inch silicon wafers by batch depositions in a horizontal hotwall LPCVD furnace. The kinetics of growth was found to follow a LangmuirHinshelwood mechanism and the appropriate kinetic constants were estimated using ...

A surface micromachined pressure sensor array is under development at the Integrated Micromechanics, Microsensors, and CMOS Technologies organization at Sandia National Laboratories. This array is designed to sense absolute pressures from ambient pressure to 650 psia with frequency responses from DC to 2 MHz. The sensor is based upon a sealed, deformable, circular LPCVD silicon nitride diaphrag...

Light management using intermediate reflector layers (IRL) and advanced front transparent conductive oxide (TCO) morphologies is needed to rise the short-circuit current density (Jsc) of micromorph tandem solar cells above 14 mA/cm. For micromorph cells deposited on surface-textured ZnO layers grown by low-pressure chemical vapour deposition (LPCVD), we study the interplay between the front TCO...