The magnetotransport in the vicinity of the metal–insulator transition in La1.85Sr0.15CuxZn1−xO4 is studied in the mK temperature range. Both longitudinal and transverse magnetoresistance are negative indicating the importance of spin effects. The magnitude of transverse magnetoresistance is larger than the magnitude of longitudinal magnetoresistance, indicating the absence of positive orbital ...

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schott...

In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attribut...

We investigated the magnetoresistance of Permalloy (Ni80Fe20) films with thicknesses ranging from a single monolayer to 12 nm, grown on Al2O3, MgO and SiO2 substrates. Growth and transport measurements were carried out at 80K in UHV. Applying in-plane magnetic vector fields up to 100mT, the magnetotransport properties were ascertained during growth. With increasing thickness the films exhibited...

A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up "spin-blocked" pathways to beco...

We have studied the temperature dependence of low-field magnetoresistance and current-voltage characteristics of a low-angle bi-crystal grain boundary junction in perovskite manganite La2/3Sr1/3MnO3 thin film. By gradually trimming the junction we have been able to reveal the non-linear behavior of the latter. With the use of the relation MGB ∝ Mbulk √ MR we have extracted the grain boundary ma...

The effects of the spin-orbit coupling SOC on the tunneling magnetoresistance of ferromagnet/ semiconductor/normal-metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance TAMR are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interfer...

We report the dependence of magnetoresistance effect on resistivity (ρ) in Co/ZnO films deposited by magnetron sputtering at different sputtering pressures with different ZnO contents. The magnitude of the resistivity reflects different carrier transport regimes ranging from metallic to hopping behaviors. Large room-temperature magnetoresistance greater than 8% is obtained in the resistivity ra...

Graphene has unique electronic properties, and graphene nanoribbons are of particular interest because they exhibit a conduction bandgap that arises due to size confinement and edge effects. Theoretical studies have suggested that graphene nanoribbons could have interesting magneto-electronic properties, with a very large predicted magnetoresistance. Here, we report the experimental observation...