As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental res...

A sensitive detector and pressure gauge for uranium hexafluoride in high-vacuum systems is described. Negative surface ionization of UF(6) occurs on ribbon filaments operated at temperatures too low for electron emission to be significant. The ion current measured on a cylindrical collector surrounding the filament assembly varies regularly with UF(6) pressure below 10(-3) Torr. Different filam...