| This work evaluates the features of a gallium arsenide E/D MESFET process in which a 32-bit RISC microprocessor was implemented. The design methodology and architecture of this prototype CPU are described. The performance sensitivity of the microprocessor and other large circuit blocks to diierent process parameters is analyzed, and recommendations for future process features, circuit approac...

A comprehensive large-signal MESFET model that provides a realistic description of measured characteristics over all operating regions is presented. It describes subthreshold conduction and breakdown. It has frequency dispersion of both transconductance and drain conductance, and derates with power dissipation. All derivatives are continuous for a realistic description of circuit distortion and...

Monolithic microwave integrated circuits (MMIC’s) may be measured under relatively high-intensity lighting conditions. Later, when they are packaged, any anomalies found in subsequent measurements could be attributed to unwanted parasitics or box modes associated with the packaging. However, optical effects may not always be considered by radiofrequency (RF) and microwave engineers. For the fir...

Previously reported quasi-optical amplifier arrays have limited bandwidth and suffer from poor input/output isolation. These prsbllems can be solved by using traveling wave antennas and distributed amplifier techniques. FII'TD simulations of a linearly tapered slot array topology demonstrate very broadband quasioptical transitions are feasible with small unitcell aperture. Experiments using a s...

This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated result...

In this paper an efficient procedure for determination of small-signal and noise behavior of microwave transistors for various bias conditions is proposed. An empirical transistor noise model based on an equivalent circuit (improvement of Pospieszalski’s noise model) is considered. Since it is necessary to extract values of the model equivalent circuit for each bias point (which requires the me...

This paper discusses a novel technique to extract small signal equivalent circuit model parameters of GaAs MESFET device based on particle swarm optimization (PSO) technique. Three different variants of PSO namely basic PSO, Delta well quantum PSO (DQPSO) and Harmonic well quantum PSO (HQPSO) are implemented and compared. We find that these techniques extract the 16-element small signal model p...

This paper presents an application of swarm intelligence technique namely Artificial Bee Colony (ABC) to extract the small signal equivalent circuit model parameters of GaAs Metal Extended Semiconductor Field Effect Transistor (MESFET) device and compares its performance with Particle Swarm Optimization (PSO) algorithm. Parameter extraction in MESFET process involves minimizing the error, which...

a high accurate and low-voltage analog cmos current divider which operates with a single power supply voltage is designed in 0.18µm cmos standard technology. the proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. the proposed divider is modeled with neural network while tlbo algorithm is used to optimize it. the proposed optimization...