Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of...

In order to acquire radiation-tolerant characteristics in integrated circuits, a dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was adopted. The DGA n-MOSFET has a different channel shape compared with the standard n-MOSFET. The standard n-MOSFET has a rectangular channel shape, whereas the DGA n-MOSFET has an extended rectangular shape at the...

BACKGROUND Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to bone marrow transplant. It is involved in the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore measuring and monitoring the skin dose during the treatment is important. Two kinds of metal oxide semiconductor field effect transisto...

MOSFET is the most commonly used devices in DC-DC power converters, and its performance is important to the prognosis and health management of power. The paper proposes a degradation analysis model for MOSFET in DC-DC power converters. A method for detecting the degradation of MOSFET is also introduced. Simulations have shown that the method can predict deterioration in the performance of MOSFE...

A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and capacitors. The proposed scheme is designed to improve the gain deviation characteristics of the HVPA at higher input powers. By controlling the MOS...

A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed compared to a conventional (C-MOSFET) using numerical TCAD simulation. Due the (HJD) located at mesa region, reverse recovery time charge of IHP-MOSFET decreased by 62.5% 85.7%, respectively. In addition, high breakdown voltage (BV) low maximum oxide electric field (EMOX) could be achieved ...

In this paper, we explore the quantitative investigation of the high-frequency performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire (SiNW) MOSFET and compared with Silicon Nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET in terms of transc...

In the paper boost converter characteristics at the steady state obtained from SPICE analysis with the use of selected kinds of MOSFET models of various complexity and accuracy are compared. The dependencies of the converter output voltage, the watt-hour efficiency and the MOSFET inner temperature on the frequency and the duty cycle of the MOSFET control signal as well as the converter load res...