The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regi...

The application of asymmetric Schottky barrier and electrode area in an MgZnO metal-semiconductor-metal (MSM) solar-blind ultraviolet photodetector has been investigated by a physical-based numerical model in which the electron mobility is obtained by an ensemble Monte Carlo simulation combined with first principle calculations using the density functional theory. Compared with the experimental...

The resonance behavior of metal transmission gratings and its impact on the response of metal-semiconductor-metal ~MSM! photodetectors have been studied experimentally and theoretically. The metal gratings, with finger spacings in the subwavelength region of the visible light, were fabricated using e-beam lithography and lift-off. Strong resonances have been observed only in the S polarization....

Presented here is a computational system which uses free−space optical interconnect (FSOI) communication between processing elements to perform distributed calculations. Technologies utilized in the development of this system are integrated two−dimensional Vertical Cavity Surface Emitting Lasers (VCSELs) and MSM−photodetector arrays, custom CMOS ASICs, custom optics, wire−bonded chip−on−board a...

We report a GaN based metal–semiconductor–metal (MSM) infrared photodetector enabled with azimuthally distributed sub-wavelength gratings fabricated on one of the working electrodes. Under illumination, hot electron transfer is introduced by plasmonic resonance in waveband formed at interface Au/GaN. Without help using any external optical polarizers, device able to detect radial polarization v...

Abstract Persistent photoconductivity deeply affects the performance of photodetector, and has been studied in a variety semiconductor optoelectronic devices. In this work, AlGaN/GaN metal-heterojunction-metal (MHM) ultraviolet (UV) detectors GaN metal-semiconductor-metal (MSM) were prepared using transverse Schottky contacts, characterized at different temperatures, light intensity bias voltag...

46 LLE Review, Volume 93 Metal–semiconductor–metal (MSM) photodiodes made on GaN are attractive candidates for fast ultraviolet (UV) signals due to the simplicity of fabrication and the visible blind feature (no response for λ > 365 nm). The temporal response of a MSM photodetector fabricated on GaN has been examined both theoretically1 and experimentally.2–4 While the theoretical modeling for ...

This thesis presents models, simulation techniques, and simulation results for two types of semiconductor nanodevice; the metal-semiconductor-metal (MSM) photodetector, and the ballistic deflection transistor (BDT). Our simulation tools were developed using the commercial ComsolTM finite element analysis (FEA) field solver to obtain the numeric solutions. Finite element models have been develop...