Abstract Electron transporting, or n -type, semiconductors can serve as charge-transport materials, and are ideal for use in organic electronic devices. Boron-based small molecules have garnered immense research attention the heteroatom effectively alter structures leading to excellent photophysical electrochemical properties. A luminescent Schiff base ( E )-(4-((2-(2-hydroxybenzoyl)hydrazono)m...

Interfacial engineering at the dielectric/semiconductor interface is highly crucial for fabricating organic field-effect transistors with high performance. In this study, a bilayer MXene/semiconductor configuration introduced to fabricate high-performance n-type transistor, where electrical charges are formed and modulated SiO2/semiconductor interface, MXene nanosheets serve as primary charge c...

in this experimental work the pressure induced phase transformation of silicon and germaniumhas been studied. it was shown that at a particular value of applied pressure, (pt), depending on the sampletemperature, the electrical resistance of the specimen falls off to a metallic state. the main goal of this studywas to find out how the phase transformation pressure, pt, for a p-type silicon vari...

Spectral sensitization by metal-free phthalocyanine (H2Pc) films was observed on various semiconductor electrodes (single-crystal n-TiO2, n-SrTi03, n-WO3, n-ZnO, n-CdS, n-CdSe, n-Si, and n-Gap; Sn02 conducting glass). The spectral response of the sensitized photocurrent was generally the same as the absorption spectrum of the phthalocyanine. The rather thick (400 8, to 1 pm) H2Pc films showed b...

We report electrical measurements of ' a sandwich structure consisting of a niobium electrode in contact with a thin lightly doped n type InGaAs layer. The bottom of the sandwich is a degenerate layer of n-type InGaAs used to collect the current. The semiconductor layers are grown by molecular beam epitaxy (MBB). These three layers are the essence of the proposed superconducting-base, semicondu...

We formed p-i-n heterojunctions based on a thin film of BiFeO3 nanoparticles. The perovskite acting as an intrinsic semiconductor was sandwiched between a p-type and an n-type oxide semiconductor as hole- and electron-collecting layer, respectively, making the heterojunction act as an all-inorganic oxide p-i-n device. We have characterized the perovskite and carrier collecting materials, such a...

An architecture in which nand p-type materials alternate laterally in the active ®lm of a device with a spatial period of about a carrier di€usion length would lead to ecient (opto)electronic devices for photovoltaic energy conversion and switching, among others. Such an architecture, although dicult to achieve with conventional silicon-based schemes, is within reach using semiconductor nanoc...