Interband mixing between two-dimensional states localized in a surface quantum well and heavy hole states of the valence band in narrow gap semiconductor Abstract Theoretical calculations in the framework of Kane model have been carried out in order to elucidate the role of interband mixing in forming the energy spectrum of two-dimensional carriers, localized in a surface quantum well in narrow...

We have studied the structural, electronic and vibrational properties of the clathrates Ba8Al16Ge30 and Ba8Al16Si30 using the local density approximation (LDA). The equilibrium structures that we have obtained for these materials show that the Si-containing compound Ba8Al16Si30 is energetically more stable than its Ge counterpart Ba8Al16Ge30 by −0.38 eV per atom. We also find that Ba8Al16Si30 i...

Density-functional theory DFT calculations have been carried out using the generalized gradient approximation GGA to investigate the atomic and electronic structure and stability of the gold oxides Au2O3 and Au2O. We find that Au2O3 is a semiconductor and is more stable than Au2O, which is an endothermic system, and only metastable. The higher stability of Au2O3 is attributed to a greater hybri...

We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te ato...

Terahertz radiation from InSb and InAS, which are typical narrow band-gap semiconductors, was investigated using time-resolved THz emission measurements. When we compared between the polarity of the THz waveforms of these narrow band-gap semiconductors with that of InP, which is a wide bandgap semiconductor, we concluded that the ultrafast buildup of the photo-Dember field is the main mechanism...

The field of charged impurities in narrow band-gap semiconductors and Weyl semimetals can create electronhole pairs when the total charge Ze of the impurity exceeds a value Zce. The particles of one charge escape to infinity, leaving a screening space charge. The result is that the observable dimensionless impurity charge Q∞ is less than Z but greater than Zc. There is a corresponding effect fo...