Si-based resonant interband tunnel diodes (RITD) were monolithically integrated with Si/SiGe heterojunction bipolar transistors (HBT) on silicon substrates effectively creating a 3-terminal negative differential resistance (NDR) device. We demonstrate that the room temperature NDR in the IC–VEC characteristics under common emitter configuration can be controlled by a third terminal which is the...

The traditional implementation of resonant tunneling diodes (RTD) as a high-frequency power source always requires the utilization of negative-differential resistance (NDR). However, there are inherent problems associated with effectively utilizing the two-terminal NDR gain to achieve significant levels of output power. This paper will present a new design methodology where resonant tunneling s...

Negative differential resistance (NDR) behaviors of single molecule junctions composed of a thiol-terminated Ru(ii) bis-terpyridine (Ru(tpy-SH)2) molecule sandwiched between two gold electrodes are measured using a specifically modified scanning probe microscope break junction technique (SPMBJ) at room temperature. The low-bias (0.623 ± 0.135 V) NDR observed for one of the three conductance gro...

This communication reports an asymmetric charge transport with a large rectification ratio and finely featured NDR (negative differential resistance) by d-orbitals of a neutral ruthenium(ii) complex with a C(2) axis of symmetry.

The mechanically controllable break junction technique is used to study charge transport through suspended DNA molecules. The current-voltage (I-V) characteristics in an aqueous solution display series of negative differential resistance (NDR) and hysteresis behavior. Under high-vacuum conditions, the peak positions of NDR shift to lower voltage, and the amplitude is reduced dramatically. The o...

Transport in photoactive graphene heterostructures, originating from the dynamics of photogenerated hot carriers, is governed by the processes of thermionic emission, electron-lattice thermal imbalance, and cooling. These processes give rise to interesting photoresponse effects, in particular negative differential resistance (NDR) arising in the hot-carrier regime. The NDR effect stems from a s...

GaN-based Negative Differential Resistance (NDR) diode oscillators have been studied by employing Gunn design criteria applicable to this material system. Numerical simulations were used to carry out large-signal analysis of the GaN NDR diode oscillators in order to evaluate their potential for THz signal generation. It was found that, due to the higher electron velocity and reduced time consta...

This paper presents a fully integrated implementation of a multivalued-logic signed-digit full adder (SDFA) circuit using a standard 0.6m CMOS process. The radix-2 SDFA circuit, based on two-peak negative-differential-resistance (NDR) devices, has been implemented using MOS-NDR, a new prototyping technique for circuits that combine MOS transistors and NDR devices. In MOS-NDR, the folded current...

Resonant tunneling diode (RTD) is an electronic device embodying a unique quantum-interference phenomenon: negative differential resistance (NDR). Compared to other negative resistance devices such as (Esaki) tunnel and transferred-electron devices, RTDs operate much faster and at higher temperatures. III-nitride materials, composed of AlGaInN alloys, have wide bandgap, high carrier mobility an...

The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with NDR and the IRSs under various temperature conditions. The 1/f noise scaling behaviors at variou...