Ultrasonic force microscopy has been applied to the characterization of titanium nitride coatings deposited by physical vapor deposition dc magnetron sputtering on stainless steel substrates. The titanium nitride layers exhibit a rich variety of elastic contrast in the ultrasonic force microscopy images. Nanoscale inhomogeneities in stiffness on the titanium nitride films have been attributed t...

MNOS memory hysteresis and memory window are simulated by calculation of tunneling probability via the potential barrier to the nitride conductance or valence band, or to Si nanocrystals embedded in the dielectric layers. The effect of the oxide and nitride current levels are studied. The memory hysteresis width depends strongly on the oxide current level. If the oxide current is close to the n...

Here, we report that the postsynthesis nitridation of tungsten oxide nanowires can result in single crystal nitride nanowires when the initial diameters of the nanowires are less than 10 nm. For nanowires with diameters greater than 10 nm, the nitridation of nanowires resulted in polycrystalline but highly oriented tungsten nitride domains in nanowires. Partially nitrided nanowires show an epit...

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius...

In this article the effects of process parameters of CHF31N2 plasma etching chemistry ~rf power 50–70 W, pressure 22.5–52.5 mTorr, and N2 content 0%–95%! and mask materials ~photoresist, aluminum, and silicon nitride! on the etching selectivity of silicon nitride over polysilicon are investigated. It was found that the selectivity increased with the N2 content in the range of 0%–85% and then de...

Graphitic carbon nitrides are investigated for developing highly durable Pt electrocatalyst supports for polymer electrolyte fuel cells (PEFCs). Three different graphitic carbon nitride materials were synthesized with the aim to address the effect of crystallinity, porosity, and composition on the catalyst support properties: polymeric carbon nitride (gCNM), poly(triazine) imide carbon nitride ...

We have imaged boron nitride nanotubes with atomic scale resolution using scanning tunneling microscopy. While some nanotubes show the expected triangular lattice pattern, the majority of the nanotubes show unusual stripe patterns which break the underlying symmetry of the boron nitride lattice. We identify the origin of the symmetry breaking and demonstrate that conventional STM imaging analys...

To determine the non-bonded interaction between methyl benzoate and boron nitridenanotube, we focused on an armchair single-wall boron nitride nanotube (9,9) With length 5 angstroms.The geometry of molecules was optimized using B3LYP method with 6-31g* basis set. Also reactivityand stability of methyl benzoate and boron nitride nanotube (9,9) was checked. Then NBO, FREQ,...

In this paper, the structure of SAW has been studied. In previous work in SAW, materials such as lithium niobium, lithium tantalite and gallium nitride were used in the structure of SAW, and thus had a low operating frequency and the highest reported operating frequency was about 4 GHz. In this paper, aluminum nitride and gallium nitride in the SAW structure are used in combination. The electro...

To extend the scaling limit of thermal SiO2 in the ultrathin regime when the direct tunneling current becomes significant, members of this author’s research team at Yale University, in collaboration with the Jet Process Corporation, embarked on a program to explore the potential of silicon nitride as an alternative gate dielectric. In this paper, highquality silicon nitride (or oxynitride) film...