The pressure dependence of the components of the recombination current at threshold in 1.3m GaInNAs single quantum-well lasers is presented using for the first time high-pressure spontaneous emission measurements up to 13 kbar. It is shown that, above 6 kbar, the rapid increase of the threshold current with increasing pressure is associated with the unusual increase of the Auger-related nonradi...

The radiative and nonradiative components of the threshold current in 1.3 m, p-doped and undoped quantum-dot semiconductor lasers were studied between 20 and 370 K. The complex behavior can be explained by simply assuming that the radiative recombination and nonradiative Auger recombination rates are strongly modified by thermal redistribution of carriers between the dots. The large differences...

Measurements of steady-state radiative efficiency versus photoexcitation rate probe the carrier-density-dependent competition between nonradiative and radiative mechanisms in semiconductors. Nonradiative recombination through defect levels is proportional to the product of defect level occupation and carrier density in the opposing band. Band-to-band radiative recombination scales with the prod...

Based on time-resolved electroluminescence (TREL) measurement, more efficient carrier injection, transport, relaxation, and recombination associated with a stronger carrier localization and a low polarization effect in a nonpolar m-plane InGaN/GaN light emitting diode (m-LED), compared with those in a polar c-LED, are reported. With a higher applied voltage in the c-LED, decreasing response tim...

The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence ~YL! of GaN....

The pressure dependence of the total threshold current and its respective recombination components in 1.3 mm GaInNAs single-quantum-well lasers using spontaneous emission measurements up to 13 kbar is presented. We observed an unusual increase of the nonradiative Auger recombination current with increasing pressure in this material, which is opposite to those in 1.3 mm InP-based InGaAsP and AlG...

The effect of In on the structural and optical properties of InxGa1-xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that t...

In a previous paper we studied an injected electron-hole pair in crystalline polyethylene (PE) and found that the exciton becomes weakly self-trapped in a narrow interchain pocket comprised between two gauche defects. Despite the large energy stored in the trapped excitation, there did not appear to be a direct nonradiative channel for electron-hole recombination. Actual polyethylene systems of...