Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600 °C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of ...

1. Introduction The surface trap of AlGaN/GaN high electron mobility transistors (HEMTs) can cause current collapse phenomenon which is the most serious limiting factor of the device's output power at high frequency operation. The surface passivation is a key step to reduce surface state effects and the quality of surface passivation film is very important [1]. Silicon nitride (SiNX) is widely ...

In this paper, the effects of plasma discharge parameters on the nano particles formation process in a plasma enhanced chemical vapor deposition (PECVD) reactor using a model based on equations of ionization kinetics for different active species are studied. A radio frequency applied electric field causes ionization inside the reactor and consequently different reaction schemically active speci...

It is well recognized that the stress of the SiNx layer in GaAs-based device structures can impact the electrical performance and lead to degradation. For GaAs MESFET and HEMT devices, it has been demonstrated not only the magnitude of the stress but also the stress state, compressive or tensile, can affect the performance [1]. Stressinduced failure via microvoid formation in SiNx MIM capacitor...

We study the high-rate deposition of microcrystalline silicon in a large-area plasma-enhanced chemical-vapor-deposition (PECVD) reactor operated at 40.68MHz, in the little-explored process conditions of high-pressure and high-silane concentration and depletion. Due to the long gas residence time in this process, the silane gas is efficiently depleted using moderate feed-in power density, thus f...

In this work, silicon nitride thin films have been deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on both silicon samples and AlGaN/GaN High Electron Mobility Transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been ...

Hydrogenated microcrystalline silicon ðmc Si : HÞ growth by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) is studied in an industrial-type parallel plate KAI reactor. Combined plasma and material characterization techniques allow to assess critical deposition parameters for the fabrication of high quality material. A relation between low intrinsic stress of the depos...

This paper presents work aimed at optimizing the fabrication of silicon nitride Si(x)N(y) thin-film visible-light planar waveguides using plasma-enhanced chemical vapour deposition (PECVD). The effects of plasma frequency, precursor gas ratio, and thermal annealing in relation to waveguide optical properties (refractive index, propagation losses) are studied. Experimental results over a wide ra...