The performance of three optoelectronic structures incorporating substrate-embedded InP-based inverted metal–semiconductor–metal photodetectors and/or volume holographic gratings are analyzed and compared at the primary optical communication wavelengths. These structures, in conjunction with optical-quality polymer layers, can be easily integrated into silicon microelectronic substrates for the...

We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of AlGaInAs quantum wells bonded to a silicon waveguide. The light in the hybrid waveguide is absorbed by the AlGaInAs quantum wells under reverse bias. The photodetector has a fiber coupled responsivity of 0.31 A/W with an internal quantum efficiency of 90 % over the 1.5 mum wavelength range. This photodetect...

Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly a...

" Efficient evanescent wave coupling conditions for waveguide-integrated thin-film SiGe photodetectors on silicon-on-insulatorgermanium-on-insulator substrates. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how ...

GaN ultraviolet photodetector with metal-semiconductor-metal structure is achieved by growing on a periodic trapezoid column-shape patterned sapphire substrate using metalorganic chemical vapor deposition. Under 5-V reverse bias, the photodetector fabricated on such patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum responsi...

We have developed a new photodetector circuit for use in interferometric gravitational wave detectors. The circuit can detect high laser power with low noise and provide multiple outputs for different signal frequencies. The dynamic range of this circuit is increased in comparison with the photodetector design used until the end of 2005.

Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition, a-Se is reported to show sensitivity against wide variety of wavelengths, including visible, UV and X-ray, where a-Se based flat-panel X-ray detecto...

To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivi...

A new tracking design for laser systems with different arrangements of a quadrant photodetector, based on the principle of active disturbance rejection control is suggested. The detailed models of quadrant photodetector with standard add–subtract, difference-over-sum and diagonal-differenceover-sum algorithms for displacement signals are included in the control loop. Target moving, nonlinearity...

The Poisson statistics of photon arrival rates are applied to the imaging performance of the Quanta Image Sensor (QIS) concept. Signal and noise as a function of exposure is analyzed and we find SNR only obeys the square-root law under sparse exposure. The Dlog H characteristic of the QIS is quantified. Linearity and dynamic range are also investigated. I. SIGNAL Photons are emitted from light ...