of photodiode and transimpedance amplifier on a 12.4 Moisture Sensitivity and Soldering. narrowly-focused beam falling only on the photodiode provides improved settling times from allanalog circuits to data conversion base circuits. Q1 and Q2 form a "cascode" amplifier circuit. To compensate for the high-frequency rolloff of the photodiode, U1B is configured as Daylight modifications will drama...

Midwave infrared (MWIR) InAs/GaSb superlattice (SL) photodiode with a dopant-free p-n junction was fabricated by molecular beam epitaxy on GaSb substrate. Depending on the thickness ratio between InAs and GaSb layers in the SL period, the residual background carriers of this adjustable material can be either n-type or p-type. Using this flexibility in residual doping of the SL material, the p-n...

This paper describes the recent advances in semiconductor photodiodes for use in ultra-high-speed optical systems. We developed two types of waveguide photodiodes (WG-PD) — an evanescently coupled waveguide photodiode (EC-WG-PD) and a separated-absorption-andmultiplication waveguide avalanche photodiode (WG-APD). The EC-WGPD is very robust under high optical input operation because of its distr...

N-well photodiodes and N+-diffusion photodiodes are available from standard CMOS processes. The comparison of quantum efficiency and dark current density for both structures have been described. The N-well photodiodes showed higher Quantum Efficiency (Q.E.) and lower dark current density than the N+-diffusion photodiodes. The photodiode capacitance is another important parameter. It determines ...

BGO is expected to be plausible devices for soft gamma-ray detectors, because of a high detection efficiency for soft gamma-rays. Here we report on the good performance of BGO readout with PIN-photodiode or avalanche photodiode as a soft gamma-ray detector. We confirmed that the signal output of BGO becomes comparable to that of GSO when it is readout with photodiodes due to better matching bet...

In the paper, the influence of temperature variation on the sensitivity of an avalanche-photodiode-based optical receiver applied in the free space optical communication link is discussed. Communication systems of this type are exposed to a wide range of operating temperatures, which markedly affect many photodiode and preamplifier parameters. The paper presents a receiver sensitivity calculati...

Abstract—This study is aiming at establishing the relationship between the optical signal of flame and an equivalent ratio of flame. In this experiment, flame optical signal in a furnace is measured using photodiode. The combustion system is composed of metal fiber burner and vertical furnace, and flame chemiluminescence is measured at various experimental conditions. In this study, the flame c...

Introduction: Radiation imaging is one of the applicable methods in diagnostic medicine and nondestructive testing for industrial applications. In nondestructive 3D imaging, in addition to the radiation source, there is a requirement for a suitable detection system, data acquisition system, mechanical sections for moving objects, reconstruction algorithm and finally a computer for processing an...

Abstract: This paper discusses the photodiode capacitance dependence on imposed light and applied voltage using different devices. The first device is a double amorphous silicon pin-pin photodiode; the second one a crystalline pin diode and the last one a single pin amorphous silicon diode. Double amorphous silicon diodes can be used as (de)multiplexer devices for optical communications. For sh...

We report an evaluation of an epitaxially grown uncooled InAs photodiode for the use in radiation thermometry. Radiation thermometry measurements was taken using the photodiode covered blackbody temperatures of 50 °C–300 °C. By determining the photocurrent and signal-to-noise ratio, the temperature error of the measurements was deduced. It was found that an uncooled InAs photodiode, with the pe...