The suitability of three vapor deposition techniques for pore size modification was evaluated using polycarbonate track etched membranes as model supports. A feature scale model was employed to predict the pore geometry after modification and the resulting pure water flux. Physical vapor deposition (PVD) and pulsed plasma-enhanced chemical vapor deposition (PECVD), naturally, form asymmetric na...

For wafer sizes in state-of-the-art semiconductor manufacturing ranging up to 300 mm, the uniformity of processes across the wafer becomes a very important issue. We present a fully three-dimensional model for the feature scale simulation of continuum transport and reaction determined high-pressure chemical vapor deposition processes suitable for the investigation of such nonuniformities. The n...

nanoporous graphene which is used as nanosorbent was synthesized by chemical vapor deposition method via porous zinc oxide nanocatalyst. the reaction was carried out using methane as the carbon source and hydrogen as the carrier gas in a ratio of 4:1 at the temperature ranging 900-1050°c for 2-50 min. the product was characterized by scanning electron microscopy, transmission electron microscop...