نتایج جستجو برای: quantum well lasers

تعداد نتایج: 1796276  

2014
W. T. Tsang F. S. Choa M. C. Wu Y. K. Chen R. A. Logan S. N. G. Chu A. M. Sergent C. A. Burrus

Articles you may be interested in Picosecond laser dynamics of gaincoupled and indexcoupled InGaAs/InGaAlAs quantum well distributed feedback lasers Appl. Ultralow chirping short optical pulse (16 ps) generation in gaincoupled distributed feedback semiconductor lasers Appl.

2014
M. Hong Y. K. Chen M. C. Wu J. M. Vandenberg S. N. G. Chu J. P. Mannaerts M. A. Chin

Articles you may be interested in Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy Appl. Very low threshold single quantum well gradedindex separate...

Journal: :physica status solidi (RRL) - Rapid Research Letters 2016

2014
S. A. Wood C. H. Molloy P. M. Smowton D. J. Somerford

Journal: :European Transactions on Telecommunications 1990
G. Hugh Song Karl Hess Thomas Kerkhoven Umberto Ravaioli

We describe a two-dimensional model for quantum-well lasers that solves self-consistently the electrical and optical equations. The model includes a wavelengthand position-dependent gain function which is derived from a quantum-mechanical calculation. We have also incorporated the effects of strain into the model, through an anisotropic parabolic band approximation of the band structure from a ...

Journal: :Optics letters 1990
Y C Chen P Wang R G Waters K K Lee

A new scheme of energy storage in single-quantum-well semiconductor lasers is analyzed. This scheme involves the storage of the majority of injected carriers in the continuum states of the surrounding bulk material, in which the carrier density is diluted and the higher-order carrier-density-dependent recombination processes are much smaller. This allows the inversion level to build up to a muc...

Journal: :Optics express 2017
Alan Y Liu Tin Komljenovic Michael L Davenport Arthur C Gossard John E Bowers

We present measurements of relative intensity noise versus various levels of optical feedback for 1.3 μm quantum dot lasers epitaxially grown on silicon for the first time. A systematic comparison is made with heterogeneously integrated 1.55 μm quantum well lasers on silicon. Our results indicate up to 20 dB reduced sensitivity of the quantum dot lasers on silicon compared to the quantum wells.

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