Ultra low-voltage (ULV) floating-gate (FG) differential amplifiers are presented. In this paper we present several different approaches to CMOS ULV amplifier design. Sinh-shaped and tanh-shaped transconductance amplifiers are described. Measured results are provided. Keywords— Floating-gate, low-voltage, low-power, lowvoltage amplifiers, analog floating-gate circuits.

In deep submicron CMOS and BICMOS technologies, antenna effects affect floating gate charge of usual floating gate test structures, dedicated to capacitor matching measurement. In this paper a new pseudo-floating gate test structure is designed. After test structure and modeling presentation, testing method and results are given for several capacitor layouts (poly-poly and metal-metal). key wor...

The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime. Recently, significant improvements in implementing circuits working in the low-voltage lowpower area have been achieved, but circuit designers face severe cha...

A neuron MOS transistor has a floating gate and multiple input gates which are capacitively coupling with the floating gate. Dramatic reduction in the number of transistors and interconnections was achieved by employing the neuron MOS in circuit designs. Since the neuron MOS gate electrode is electrically floating, it is not necessarily easy to calculate the floating gate potential using circui...

Implementation of silicon-quantum-dots (Si-QDs) as a floating gate in metal-oxide-semiconductor field-effect transistors (MOSFETs) has received increasing attention because of its potential advantage for multivalued memories operating reliably even at room temperature and above [1-3]. In this work, we focused on electron storage in Si-QDs stack structures and studied electron charging, discharg...

The floating-gate transistor can be used to design analog circuits, such as current mirrors [1], current scaler[2] and current multiplier [3, 4] and divider [4]. The multiple input floating-gate transistor can be used to design ultra lowvoltage “pseudo differential” pairs [1], hence ULV rail-to-rail amplifiers and analog multipliers are feasible using the floating-gate technique. In this paper ...

In this study, we investigated chemically exfoliated two-dimensional (2-D) nanoflakes of molybdenum disulfide (MoS2) as charge-storing elements for use in organic multilevel memory devices (of the printed/flexible non-volatile type) based on organic field-effect transistors (OFETs) containing poly(3-hexylthiophene) (P3HT). The metallic MoS2 nanoflakes were exfoliated in 2-methoxyethanol by the ...

We present an experimental study of charging mechanisms in aluminum single electron memory cells where the SiO2 surface between the floating gate and the control gate is used as a barrier dielectric and the single electron transistor is used as a readout device. We study several regimes of charging for different barriers separating the floating gate and the control gate. For thinner barriers, t...