Needs in more-efficient visible light sources based on quantum wells (QWs) requires the diversification of traditional optoelectronics’ materials as well as development of the cost-effective approaches for reliable quantum confinement engineering. Interdiffusion approach has a great potential to become a simple method for controlling the optical properties of QWs and diminishing the quantum con...

Temperature dependence of the emission properties in a novel composite quantum-well-structure consisting of wide and narrow GaAs quantum wells (QWs) embedded in a GaAs/AlAs short-period superlattice (SPS) has been studied by steady-state and time-resolved photoluminescence (PL) measurements. At low temperature (~20 K), distinct PL peaks originating from the QWs and SPS are observed. When temper...

The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs' structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure meta...

Symmetry and spin dephasing in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect and time-resolved Kerr rotation. We show that magnetic field induced photogalvanic effect provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying ...

Quantum wells (QWs) constitute one of the most important classes of devices in the study of two-dimensional (2D) systems. In a double-layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena, such as Coulomb drag, Hall drag, and exciton condensation. We demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of ch...

We have studied the linear conductance and source-drain bias spectroscopies of clean and disordered quantum wires (QWs) against thermal cycling and lateral shifting, which change the impurity configuration. Conductance quantization and the zero bias anomaly (ZBA) are robust in clean QWs. In contrast, disordered QWs show complexities in the ways of conductance resonance, peak splitting and trace...

A theoretical concept of resonant Rayleigh scattering (RRS) of exciton-polaritons in multiple quantum wells (QWs) is presented. The optical coupling between excitons in different QWs can strongly affect the RRS dynamics, giving rise to characteristic temporal oscillations on a picosecond scale. Bragg and anti-Bragg arranged QW structures with the same excitonic parameters are predicted to have ...

In this work we present a comparative study of Zn-face and O-face polarity Zn1xCdxO-based conventional and staggered quantum-well (QW) structures. The calculation of optical properties of QWs was performed by means of self-consistent Schrodinger-Poisson solver with consideration of polarization-induced effects. The conventional Zn-face and O-face QWs possess similar values of transition energy ...

We report organometallic vapor-phase epitaxy ~OMVPE! growth and optical characteristics of 1.17–1.20 mm double-heterostructure laser diodes with three Ga0.7In0.3N0.003As0.997 ~7 nm!/GaAs~10 nm! quantum wells ~GaInNAs/GaAs QWs!. Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17–1.19 mm regime ...

The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference tim...