A comparative study of different sequences of two metal precursors [trimethylaluminum (TMA) and Tris(isopropylcyclopentadienyl) lanthanum (La(iPrCp)3)] for atomic layer deposition (ALD) lanthanum aluminum oxide (LaxAlyO) films is carried out. The percentage compositions of C and N impurity of LaxAlyO films were investigated using in situ X-ray photoelectron spectroscopy (XPS). The effects of di...

Sputtered reactive multilayers applied as a heat source in electronic joining processes are an emerging technology. Their use promises low-stress assembly of components while improving thermal contact and reducing thermal resistance. Nanostructured surface modifications can significantly enhance adhesion and reliability of joints between different materials. This work examines reactive multilay...

This study focuses on the optimal control of rapid thermal annealing (RTA) used in the formation of ultrashallow junctions needed in next-generation microelectronic devices. Comparison of different parameterizations of the optimal trajectories shows that linear profiles give the best combination of minimizing junction depth and sheet resistance. Worst-case robustness analysis of the optimal con...

Amorphous silicon film (α-Si) doped with uniform erbium (Er) impurities is deposited by laser ablation technology. High density silicon nanocrystals (nc-Si) can be formed after the rapid thermal annealing (RTA) process. The crystalline process can be explained as the “metal-induced nanocrystalline mechanism”, i.e., doped erbium atoms introduce additional strain in the amorphous silicon matrix a...

In this study, the peculiarities of the transformations of gold films deposited on the Si wafer surfaces as a result of high temperature anneals are investigated experimentally depending on the conditions of wafer surface preparation and the annealing regimes. The morphology and the distribution functions of the crystallites of gold films as well as the gold droplets formed as a result of annea...

The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnO/ZnMgO multiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the supp...

Nanocrystalline zinc ferrite (ZFO) has been synthesized from metal acetylacetonates by microwave irradiation for 5 min in the presence of a surfactant. The as-prepared material is ZFO and has been subjected in air to conventional furnace annealing and to rapid annealing at different temperatures. Both annealing protocols lead to well-crystallized ZFO, with crystallite sizes in the range 8–20 nm...