نتایج جستجو برای: resistive switching
تعداد نتایج: 80099 فیلتر نتایج به سال:
Amorphous zirconium oxide thin films deposited at room temperature, sandwiched between Pt and Ti electrodes, show resistive bipolar resistive switching with good overall performance figures (retention, ON/OFF ratio and durability). A variability observed during electrical characterisation is consistent with the coexistence of two different resistive switching mechanisms within the ZrO2 layer. E...
Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switchi...
Voltage-controlled resistive switching in various gap systems on SiO2 substrates is reported. The nanoscale-sized gaps are made by several means using different materials including metals, semiconductors, and amorphous carbon. The switching site is further reduced in size by using multiwalled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the sa...
Oxygen vacancy motion and agglomeration into Magnéli phases are often associated with resistive switching in TiO2 [1-2]. However, the defect distribution and changes of device resistance are still poorly linked and require direct analysis. Extensive ex situ analysis has lead to proposed switching mechanisms that invoke defect formation/motion, but direct observation of defect evolution is still...
BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO3 thin film growth Ti diffuses into the BiFeO3 layer. The diffused Ti effectively traps and releases oxyg...
Cu nano-particles (Cu-NPs) were embedded into the SiO2 layer of a Cu/SiO2/Pt structure to examine their influence on resistive switching characteristics. The device showed a reversible resistive switching behavior, which was due to the formation and rupture of a Cu-conducting filament with an electrochemical reaction. The Cu-NPs enhanced the local electric field within the SiO2 layer, which cau...
Resistive memory is one of the most promising candidates for next-generation nonvolatile memory technology due to its variety of advantages, such as simple structure and low-power consumption. Bipolar resistive switching behavior was observed in epitaxial ZnO nanoislands with base diameters and heights ranging around 30 and 40 nm, respectively. All four different states (initial, electroformed,...
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