Single crystalline SrTiO3 doped with 0.1 wt% Nb was used as a model system to evaluate the role of the Schottky barrier in the resistive switching of perovskites. The Ti bottom electrode formed an ohmic contact in the Ni/Nb:SrTiO3/Ti stack, whereas the Ni top electrode created a strong Schottky barrier, which was reflected in a huge semi-circle in the impedance spectrum of the stack. Bipolar sw...

The retrosection theorem says that any hyperbolic or Riemann surface can be uniformized by a Schottky group. We generalize this theorem to the case of hyperbolic 2-orbifolds by giving necessary and sufficient conditions for a hyperbolic 2-orbifold, in terms of its signature, to admit a uniformization by a Kleinian group which is a finite extension of a Schottky group. Equivalent^, the condition...

The novel characteristics of a new Schottky rectifier structure, known as the lateral merged double Schottky (LMDS) rectifier, on 4H-SiC are explored theoretically and compared with those of the compatible conventional 4H-SiC Schottky rectifiers. The anode of the proposed lateral device utilizes the trenches filled with a high barrier Schottky (HBS) metal to pinch off a low barrier Schottky (LB...

Articles you may be interested in Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes Appl.

The Information-Theoretic Schottky Problem treats the period matrix of a compact Riemann Surface as a compressible signal. In this case, the period matrix of a smooth plane curve is characterized by only 4 of its columns, a significant compression.

Exact bounds for the positions of the branch points for cyclic coverings of the p-adic projective line by Mumford curves are calculated in two ways. Firstly, by using Fumiharu Kato’s ∗-trees, and secondly by giving explicit matrix representations of the Schottky groups corresponding to the Mumford curves above the projective line through combinatorial group theory.

A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width. In conventional nanodevices, Schottky contacts are usually avoided in order to enhance the contribution made by the nanowires or nanotubes to the detected signal. We present a ke...