We demonstrated the effect of superparamagnetic Fe3O4 nanoparticles on Schottky barriers of graphene, in which the Fe3O4 nanoparticles were fabricated by a hydrothermal method and the single-layer graphene sheets were mechanically exfoliated from Kish graphite. The Fe3O4 nanoparticles were superparamagnetic with the saturation magnetic moment of about 32 emu/g at room temperature. We have found...

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective ma...

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative val...

Articles you may be interested in Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Appl. Lifetime-limited current in Cu-gate metal-oxide-semiconductor capacitors subjected to bias thermal stress M...

We report the electric field and pH sensitivity of fluid gated metal-semiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on n-type GaAs. Compared to standard field-effect sensors, the MSH Schottky structures are 21 times more sensitive to electric field of -46.6 V/cm and show about six times larger resistance change as pH of the solution is decreased from 8.17 to 5.54....

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by usin...

D. C. Schmadel, ∗ J. J. Tu, D. B. Romero, L. Rigal, 4 M. Grayson, 5 G. D. Gu, and H. D. Drew 6 Department of Physics, University of Maryland, College Park, Maryland 20742 USA Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 USA Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20742 USA Laboratoire National des Champs Magnétiques Pulsés...

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Electrical transport measurements were used to study device behavior that results from the interplay of defects and inadvertent contact variance that develops in as-grown semiconducting single wall carbon nanotube devices with nominally identical Au contacts. The transport measurements reveal that as-grown nanotubes contain defects that limit the performance of field-effect transistors with ohm...