The optical and electronic properties of semiconducting materials are of great importance to a vast range of contemporary technologies. Diamond-cubic germanium is a well-known semiconductor, although other 'exotic' forms may possess distinct properties. In particular, there is currently no consensus for the band gap and electronic structure of ST12-Ge (tP12, P43212) due to experimental limitati...

The Co0.7-xNixMn0.3Fe2O4 (CNMFO) ferrites with x = 0.00, 0.05, 0.10 and 0.15, PbZr0.52Ti0.48O3 (PZT) ferroelectric 30% CNMFO – 70% PZT magnetoelectric (ME) composites were synthesized by double sintering ceramic method. XRD confirmed the pure phase formation of all compositions ferrite, ME composites. All ferrites, show negative temperature coefficient resistance (NTCR) confirming semiconductin...

A principal cause of THz emission in semiconductor nanostructures is deeply involved with geometry, which stimulates the utilization of indirect bandgap semiconductors for THz applications. To date, applications for optoelectronic devices, such as emitters and detectors, using THz radiation have focused only on direct bandgap materials. This paper reports the first observation of strongly enhan...

A considerable fraction of germanium is produced as a by-product in zinc metallurgy. In the conventional roast-leach-electrowin (RLE) process, most of the germanium is incorporated into the neutral leaching residue, which is the main source for germanium recovery. As the largest germanium supplier worldwide, Yunnan Chihong Zinc & Germanium Co., Ltd (Yunnan, China), recover germanium shown in Fi...

High-purity germanium compounds (e.g. germanium dioxide) are used these days in several applications (e.g. germanium-based detectors, semiconductors, fiber-optic systems). Thus, reliable methods for the routine determination of trace element impurities from germanium compounds must be developed. In this study, inductively coupled plasma mass spectrometry, inductively coupled plasma optical emis...

Semiconductor nanocrystals are often proposed as a viable route to improve solar energy conversion in photovoltaics and photoelectrochemical systems. Embedding the in, e.g. transparent conducting electrode of cell will promote photon absorption subsequent transfer generated charge carriers from nanocrystal, thereby enhance function electrode. This can be accomplished by embedding semiconducting...

Abstract Resonant nanostructures, such as photonic metasurfaces, have created an unprecedented case for enhanced light–matter interactions through local field engineering. However, the presence of resonances fundamentally limits bandwidth interactions. Here, we report on amending nonlinear optical response a semiconducting metasurface Q-boosting, where Q-factor rapidly increases with time. The ...

In a theoretical design study, we propose buried waveguides made of germanium or alloys of germanium and other group-IV elements as a CMOS-compatible platform for robust, high-gain stimulated Brillouin scattering (SBS) applications in the mid-infrared regime. To this end, we present numerical calculations for backward-SBS at 4 μm in germanium waveguides that are buried in silicon nitride. Due t...

Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge ...