Physical characterization of semiconductor device has always been a challenging task for device engineers and researchers. Up to now, standard methods for characterizing semiconductors did not provide an effective means for determining two-dimensional quantities of sub-device scale. These methods include Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Secondary Ion M...

Colloidal quantum dots offer broad tuning of semiconductor band structure via the quantum size effect. In this paper, we present a detailed investigation on the influence of the thickness of colloidal lead sulfide (PbS) nanocrystals (active layer) to the photovoltaic performance of colloidal quantum dot solar cells. The PbS nanocrystals (QDs) were synthesized in a non-coordinating solvent, 1-oc...

This document describes the research plans of the MRJ Semiconductor Device Modeling Program at NAS as of September 1997. The general motivation and approach for this work is presented first. Then, for each specific project in the program, the motivation, approach, and specific plans for the contract year are described.

The agricultural civilization in the cultural history of man was said to be the result of two genetic accidents which gave birth to a new species of bread wheat some 10,000 years ago, involving wild wheat and goat grass. Large-scale agricultural activity in man's society followed. Great inventions or discoveries could be considered to be such genetic accidents-mutations. New knowledge, arising ...

The carbon nanotube and graphene nanoribbon band structure is derived using the two-band k · p method and shown to have a similar band structure as a III-V semiconductor. Contrary to a previous claim, it is shown that the tunnelling probability is lower for a graphene based semiconductor than for a III-V semiconductor with the same bandgap. Considering the relation between the bandgap and the e...

Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we de...

In this paper we present a state-of-theart report on mathematical and numerical steady state semiconductor device modeling. As underlying device model we use the basic semiconductor device equations, which consist of Poisson's equation, the current relations and the continuity equations. By appropriate scaling we reformulate the device problem as singularly perturbed elliptic system with the ch...