نتایج جستجو برای: semiconductor laser

تعداد نتایج: 237377  

Journal: :Optics letters 1998
S P Hegarty G Huyet P Porta J G McInerney

We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensit...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه گیلان 1388

چکیده ندارد.

Journal: :THE JOURNAL OF JAPAN SOCIETY FOR LASER SURGERY AND MEDICINE 1991

1995
B. B. Goldberg W. D. Herzog H. F. Ghaemi MA E. Towe

Neareld optical microscopy and spectroscopy is emerging as a powerful tool for the investigation of semiconductor structures. Tunable excitation combined with subwavelength resolution is providing an unprecedented level of detail on the local optical properties of semiconductor structures. Recent neareld optical studies have addressed issues of laser diode mode pro ling, minority carrier transp...

Journal: :IEICE Transactions 2007
Nong Chen Jesse Darja Shinichi Narata Kenji Ikeda Kazuhiro Nishide Yoshiaki Nakano

In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تبریز - دانشکده فیزیک 1386

چکیده ندارد.

   Self-heating leads to a temperature rise of the laser diode and limits the output power and efficiency due to increased loss and decreased differential gain. To control device self-heating, it is required to design the laser structure with a low optical loss, while the heat flux must spread out of the device efficiently. In this study, a new asymmetric waveguide design is proposed and th...

1998
William H. Burkett Baolong Lü Min Xiao

The spectral characteristics of a semiconductor laser are altered by injecting additional noise current into its currentdrive port. A continuously varying spectral linewidth from about 5 MHz to above 100 MHz is achieved experimentally in this semiconductor laser. The conditions under which the line shape changes from a standard Lorentzian shape to a Gaussian shape as functions of laser power an...

2012
Tillmann Kubis Saumitra Raj Mehrotra Gerhard Klimeck

Related Articles High power femtosecond Bessel-X pulses directly from a compact fiber laser system Appl. Phys. Lett. 101, 151111 (2012) Ground state terahertz quantum cascade lasers Appl. Phys. Lett. 101, 151108 (2012) Optofluidic random laser Appl. Phys. Lett. 101, 151101 (2012) Electro-optically cavity dumped 2μm semiconductor disk laser emitting 3ns pulses of 30W peak power Appl. Phys. Lett....

Journal: :Optics letters 2007
Hartmut Erzgräber Bernd Krauskopf

The behavior of a semiconductor laser subject to filtered optical feedback is studied in dependence on the width of the filter. Of special interest are pure frequency oscillations where the laser intensity is practically constant. We show that frequency oscillations are stable in a large region of intermediate values of the filter width, where the dispersion of the filter is able to compensate ...

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