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The role of contact between semiconducting nanowire and metal electrodes in a single nanowire field effect transistor (NW-FET) is investigated for the sensing of different type of gases. Two different types of In(2)O(3) nanowire devices, namely; Schottky contact device (SCD) and Ohmic contact device (OCD) are evaluated. SCD has shown a superior response to the reducing gas (CO) compared to oxid...

Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nan...

the efficient detection of charged biomolecules by biosensor with appropriate semiconducting nanomaterials and with optimum device geometry has caught tremendous research interest in the present decade. here, the performance of various label-free electronic biosensors to detect bio-molecules is investigated by simulation technique. silicon nanowire sensor, nanosphere sensor and double gate fiel...

A novel ZnO seedless chemical approach for density-controlled growth of ZnO nanowire (NW) arrays has been developed. The density of ZnO NWs is controlled by changing the precursor concentration. Effects of both growth temperature and growth time are also investigated. By this novel synthesis technique, ZnO NW arrays can grow on any substrate (polymer, glass, semiconductor, metal, and more) as l...

The non-scalable room temperature 60 mV/dec subthreshold swing of a conventional MOSFET is a fundamental limit to the continuation of transistor power scaling. In order to further reduce transistor power consumption and transistor footprint, new subthreshold transport mechanisms other than thermionic emission over an energy barrier are required. In this thesis, we devote our efforts towards the...

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performa...

Miniaturization in electronics through improvements in established "top-down" fabrication techniques is approaching the point where fundamental issues are expected to limit the dramatic increases in computing seen over the past several decades. Here we report a "bottom-up" approach in which functional device elements and element arrays have been assembled from solution through the use of electr...

In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on ...