نتایج جستجو برای: semiconductor thin film

تعداد نتایج: 241592  

Dye-sensitized solar cells (DSSCs) are categorized as some of inexpensive thin-film solar cells. The basis and foundation of these cells is a semiconductor that consists of an electrolyte and a light-sensitive anode. Titanium dioxide (TiO2) is a semiconductor that plays the role of anode and is the main constituent of these cells. In this paper, we have addressed the functionality and performan...

2015
Alta Fang Anna K. Hailey Abigail Grosskopf John E. Anthony Yueh-Lin Loo Mikko Haataja

Articles you may be interested in Temperature gradient approach to grow large, preferentially oriented 6,13-bis(triisopropylsilylethynyl) pentacene crystals for organic thin film transistors Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films A Boltzmann-weighted hopping model of charge transport in organic semi...

Recently, high – K materials such as Al2O3 and TiO2 films have been studied to replace ultra thin gate silicon dioxide film. In the present work, these films were grown on the top of Si(100) surface at different temperatures and under ultra high vacuum conditions. The obtained results showed that Al2O3 has a structure better than that of TiO2 and thus can be used as a good gate dielectric ...

Journal: :international journal of nano dimension 0
s. sagadevan department of physics, sree sastha institute of engineering and technology, chembarambakkam, chennai 600123, india. k. pandurangan department of physics, madha engineering college, kundrathur, chennai, india.

nowadays, ii – iv group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. cadmium zinc sulfide (zn-cds) thin films were grown by chemical bath deposition (cbd) technique. x-ray diffraction (xrd) is used to analyze the structure and crystallite ...

2006
Anan Banharnsakun Rardchawadee Silapunt Tiranee Achalakul

Nowadays, the thin film deposition process is essential in the semiconductor fabrication process and used extensively in many applications. Progress in each of these areas depends upon the ability to selectively and controllably deposit thin films. This paper proposes a design framework and implementation of the simulation of thin film deposition processes. This presented work focuses on the de...

2015
Woobin Lee Seungbeom Choi Kyung Tae Kim Jingu Kang Sung Kyu Park Yong-Hoon Kim

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a pe...

K. Pandurangan S. Sagadevan,

Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite ...

K. Pandurangan S. Sagadevan,

Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite ...

2012
Du.-Zen Peng Ting-Chang Chang Hsiao-Wen Zan Tiao-Yuan Huang Chun-Yen Chang Po-Tsun Liu

Related Articles Physical understanding of negative bias temperature instability below room temperature J. Appl. Phys. 112, 104514 (2012) Lg=60nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator Appl. Phys. Lett. 101, 223507 (2012) The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors Appl. Phys. Lett. 101, 2...

2015
Junliang Yang Sanggyu Yim Tim S. Jones

We study the roughening process and morphology transition of organic semiconductor thin film induced by molecular orientation in the model of molecular semiconductor copper hexadecafluorophthalocyanine (F16CuPc) using both experiment and simulation. The growth behaviour of F16CuPc thin film with the thickness, D, on SiO2 substrate takes on two processes divided by a critical thickness: (1) D ≤ ...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید