Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their potential applications in spintronics and their striking new physical properties. So far Mn-doped III-V compound semiconductors such as GaMnAs are the most important and best understood ones, but they are ferromagnetic only at well below room temperature. An interesting alternative could be magnetic sem...

me usefulness and capabilities of photoelectrochemical processing of III-V semiconductors is presented. Examples include the etching of small period gratings, the formation of integral lenses, the decomposition of small bandgap semiconductors, the etching of ptype semiconductors, and the photoinitiated deposition of metal. The transport of carriers in the semiconductor and reactivity of the sur...

Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides ...

The new laser method for nanostructures formation on a surface of semiconductors Si, Ge, GaAs and SiGe, CdZnTe solid solutions is proposed. For the first time was shown the possibility of graded band gap structure formation in elementary semiconductors. Thermogradient effect has a main role in initial stage of nano-cones and graded band gap structure formation by laser radiation in semiconductors.

If magnetic semiconductors are ever to find wide application in real spintronic devices, their magnetic and electronic properties will require tailoring in much the same way that bandgaps are engineered in conventional semiconductors. Unfortunately, no systematic understanding yet exists of how, or even whether, properties such as Curie temperatures and bandgaps are related in magnetic semicond...

Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductor...

Many different compound semiconductors can be formed by changing the combination of constituent elements. Properties of alloy semiconductors composed of a plurality of compound semiconductors can be changed in a continuous fashion by changing the composition ratio. A very thin alloy semiconductor multilayer showing interesting properties can be formed by sophisticated epitaxial growth methods s...

A semiclassical treatment of spin relaxation in direct-gap compound semiconductors due to scattering by edge dislocations from both charged cores, and the strain fields surrounding them is presented. The results indicate a deleterious effect on spin transport in narrow bandgap III-V semiconductors due to dislocation scattering. However, this form of scattering is found to be surprisingly benign...

Metal films are known to dissolve crystalline semiconductors at temperatures well below the eutectic temperature. Dissolution and transport of common semiconductors in contact with Au films have been demonstrated at room temperature. 1 The solid AI metallization used in electronic devices is known to dissolve troublesome quantities of crystalline Si after heat treatment at 400oC.2 Metal films a...

Spectrally selective light detection is vital for full-colour and near-infrared (NIR) imaging and machine vision. This is not possible with traditional broadband-absorbing inorganic semiconductors without input filtering, and is yet to be achieved for narrowband absorbing organic semiconductors. We demonstrate the first sub-100 nm full-width-at-half-maximum visible-blind red and NIR photodetect...