Abstarct In this paper, combination of channel, receiver frequency-dependent IQ imbalance and carrier frequency offset estimation under short cyclic prefix (CP) length are considered in OFDM system. An adaptive algorithm based on the set-membership filtering (SMF) algorithm is used to compensate for these impairments. In short CP length, per-tone equalization (PTEQ) structure is used to avoid i...

The rapid progress of silicon technology is continuing with present generation technologies of gate lengths less than 22 nm. Moore’s law states the scaling of ICs, which carried out a lot of research in Nano world. Early years of silicon era used MOSFETs for designing the circuits. Many research articles have been published that demonstrate the improved short-channel effects of conventional bul...

Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of...

In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS(2) two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS(2) transistors. We observe no obvious short channel effects on t...