نتایج جستجو برای: shotcky barrier diode

تعداد نتایج: 109997  

A new side-contacted field effect diode (S-FED) structure has beenintroduced as a modified S-FED, which is composed of a diode and planar double gateMOSFET. In this paper, drain current of modified and conventional S-FEDs wereinvestigated in on-state and off-state. For the conventional S-FED, the potential barrierheight between the source and the channel is observed to b...

2007

This paper presents an undergraduate student research project which involved a new power diode called the Super Barrier Rectifier (SBR) diode. Several projects incorporating SBR diodes in dc-dc converters performed by undergraduate students will be described. Challenges in conducting these projects along with results will also be discussed. Index Terms – Undergraduate research.

   Hybrid polyaniline (PANI) based composites incorporating zinc sulfide (ZnS) nanoparticles (NPs) have been synthesized by using chemical oxidation technique. Schottky junction is constructed by depositing Polyaniline-zinc sulfide nanocomposite (PANI-ZnS NCs) on Au electrode. The results were compared with pure polyaniline. The I–V characteristics of the PANI-ZnS NCs hete...

2011
Jun Luo Xindong Gao Zhi-Jun Qiu Jun Lu Dongping Wu Chao Zhao Junfeng Li Dapeng Chen Lars Hultman Shi-Li Zhang

A. Adibi, MJ SHARIFI

In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as Poisson, Lap lace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in sever...

2012
Mevlüde Canlıca Mustafa Coşkun Ahmet Altındal

An Ag/Pc/p-Si Schottky barrier (SB) diode was fabricated. The current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were carried out to determine the characteristic parameters such as barrier height, ideality factor and series resistance of the SB diode. The non-linear behavior of ln (I) vs. ln (V) and ln (I/V) vs. V plots indicated that the thermoionic emi...

2009
E. O. Johnson

Diamond, which has excellent physical properties, is attractive for use in industrial applications. Because diamond is rated the highest for hardness and heat conductivity among all known materials, it is widely used for products such as abrasive grains, cutting tools, and heatsinks. Diamond also exhibits excellent transparency even in the ultraviolet range and can be applied to optical tools. ...

2013
V. Rajagopal Reddy L. Dasaradha Rao V. Janardhanam Min-Sung Kang Chel-Jong Choi

The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by current­voltage (I­V), capacitance­voltage­frequency (C­V­f ) and conductance­voltage­frequency (G­V­f ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (I­V)/0.79 eV (C­V) and 1.24, respectively. As well, t...

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