This paper studies how boron transient enhanced diffusion (TED) and boron thermal diffusion in Si1 Ge are influenced by a high-energy fluorine implant at a dose in the range 5 10 14 cm 2 to 1 10 cm . Secondary ion mass spectroscopy (SIMS) profiles of boron marker layers are presented for different fluorine doses and compared with fluorine SIMS profiles and transmission electron microscopy (TEM)...

The emergence of third-generation photovoltaics based on Si relies on tunable bandgap materials with embedded nanocrystalline Si. One of the most promising approaches is based on the mixed-phase Si1 - xCx. We have investigated the light absorption controllability of nanocrystalline Si-embedded Si1 - xCx produced by thermal annealing of the Si-rich Si1 - xCx and composition-modulated superlattic...

In our contribution we present the fabrication of Si1−xGex alloy by ion-implantation and millisecond ash lamp annealing. The 100 keV Ge ions at the uence of 10 × 10, 5 × 10, and 3 × 10 cm−2 were implanted into monocrystalline (100)-oriented Si wafers covered by 50 nm thermal oxide. In the consequence, the 50 nm amorphous Ge rich Si layers were obtained. The recrystallization of the implanted la...

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a f...

Abstract Growth conditions for epitaxy of Si1-x-yGexCx and Si1-xCx alloy layers on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane as the silicon source gas are described and the Si1-xCx conditions are compared to previously reported RTCVD growth conditions for epitaxy of Si1-xCx using silane as the source gas. The thermal stability of the layers at 850...

Silicon (Si) and germanium (Ge) semiconductor nanowires can be utilized in next generation electronic, photonic, and energy conversion devices. Si, Ge, and Si1-xGex materials are also well studied and currently used in industry. Optoelectronic properties, such as the band gap, can be tuned by modulating the alloy composition, thus allowing for a wider range of uses. The focus of this project wa...

Multiple representation of spatial data, which means obtaining different detailed representation of geographic phenomena based on the same spatial database or different data versions, is one of the key technologies for digital earth. It plays an important role in such applications as seamless data navigation, progressive web transfer and self-adaptable visualization. Multiple representation tec...

OBJECTIVE To compare the variability of symmetry indices within and between days when using one and two force plates for data collection. ANIMALS Seventeen healthy client-owned adult dogs. METHODS Vertical ground reaction force data were collected in a crossover study design, with four collection sessions on two consecutive days, and then two weeks apart (days 1, 2, 15, and 16) using both 1...

The central pattern generator (CPG) underlying the rhythmic swimming behavior of the nudibranch Melibe leonina (Mollusca, Gastropoda, Heterobranchia) has been described as a simple half-center oscillator consisting of two reciprocally inhibitory pairs of interneurons called swim interneuron 1 (Si1) and swim interneuron 2 (Si2). In this study, we identified two additional pairs of interneurons t...

Both pand n-channel poly-Si/Si1 Ge /Si sandwiched conductivity modulated thin-film transistors (CMTFTs) are demonstrated and experimentally characterized. The transistors use a poly-Si/Si1 Ge /Si sandwiched structure as the active layer to avoid the poor interface between the gate oxide and the poly-Si1 Ge material. Also an offset region placed between the channel and the drain is used to reduc...