The perfectly ordered parallel arrays of periodic Ce silicide nanowires can self-organize with atomic precision on single-domain Si(110)-16 × 2 surfaces. The growth evolution of self-ordered parallel Ce silicide nanowire arrays is investigated over a broad range of Ce coverages on single-domain Si(110)-16 × 2 surfaces by scanning tunneling microscopy (STM). Three different types of well-ordered...

: Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-p...

A mathematical model is constructed to interpret the profiles of radioactive Si tracers in a computer simulation proposed by R. Pretorius and A. P. Botha [Thin Solid Films 91, 99 ( 1982)]. This model assumes that only Si moves in the silicide, that the Si moves interstitially and convectively, and that the moving Si can exchange sites with the stationary Si in the silicide lattice. An analytica...

The optimization of 45nm NMOS device was studied using Taguchi Method. This method was used to analyze the experimental data in order to get the optimum results. In this paper, there are four factors were varied for 3 levels to perform 9 experiments. Silicide on the poly-Si gate electrode was used to reduce the gate electrode resistance. The virtually fabrication of 45nm NMOS device was perform...

We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes, and each contact was selectively silicided by means of the Joule effect. By a real-time monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nick...

Pulsed laser deposition was used to grow epitaxial p-FeSis films on Si(ll1) (1X1) and Si(ll1) (7X7) with the following epitaxial orientations: P-FeSi2(OOl)//Si(lll) with @-FeSi~OlO]//Si(llO) and three rotational variants’silicide growth was influenced by substrate temperature and deposition rate, but not by the structure of the starting surface. Films containing both P-FeSia and FeSi were forme...

Soft x-ray uorescence spectroscopy has been employed to obtain information about the Si-derived valence band states of Fe/Si multilayers. The valence band spectra are quite diierent for lms with and without antiferromagnetic interlayer exchange coupling, demonstrating that these multilayers have different silicide phases in their spacer layers. Comparison with previously published uorescence da...