The integrity and issues related performance associated with scaling Si MOSFET channel length promotes research in new device SOI, double gate and GAA MOSFET. In this paper, we pr novel characteristic of horizontal rectangular gate MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some para...

FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF...

We discuss state of the art and new developments for the path to first time right silicon for analog circuits. This article touches on a few of the issues that are important, when selecting a foundry partner for the next design. However the bottom line is that the existence of a comprehensive PDK with accurate process models and QA controlled CAD technology data is key to getting first time rig...

A new performance and area optimization algorithm for complex VLSI systems is presented. It is widely believed within the VLSI CAD community that the relationship between delay and silicon area of a VLSI chip is convex. This conclusion is based on a simpliied linear RC model to predict gate delays. In the proposed optimization algorithm, a nonlinear, non-RC based transistor delay model was used...

A hydrodynamical model for electron transport in silicon semiconductors, which is free of any fitting parameters, has been formulated on the basis of the maximum entropy principle. The model considers the energy band to be described by the Kane dispersion relation and includes electron–nonpolar optical phonon and electron–acoustic phonon scattering. The set of balance equations of the model for...

Two major programs aiming at supporting academic education and technology transfer to SMEs in the field of microelectronics have been launched in mid-95 by the Commission of the European Communities (EC). The EUROPRACTICE program provides basic services including silicon foundries, training ariNd access to MCMs, microsystems and CAD so&are, while the FUSE program encourages companies to use a m...

At this time, the functional design of the x-chip is being completed. Detailed design is scheduled to begin in the spring, with fabrication of the first chip scheduled for the end of summer. We plan to use MOSIS, a silicon brokerage service funded by DARPA and NSF, to fabricate the chips. Our CAD tools consist of the VLSI design tools from the University of Washington, augmented by other public...

Contrary to prevailing consumer conceptions of efficient silicon use, previous research efforts have shown that designing routing-poor FPGAs may yield significant area gains. In this paper we show that conventional wirelength-centric placement tools are unable to deal with the challenges that routing-limited CAD problems present. We believe that this problem is present given today’s architectur...

The application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics , as well as radiation-induced deep-level recombi-nation centers. Realistic description of multiple-strip devices can be accounted for. To allow for validation of the analysis tool, actual detectors have been measured, be...