The silicon-on-insulator (SOI) material system is today widely recognized as one of the most important platforms for the development of photonic components. This is mainly due to the fact that the mass fabrication techniques of the CMOS technology can be used for the fabrication of these SOI components. However, using silicon for photonic components has significant downsides. For example, it is...

The high-voltage and self-heating behavior of partial-SOI (silicon-on-insulator) LDMOSFETs were studied numerically. Different locations of the silicon window were considered to investigate the electrical and thermal effects. It is found that the potential distribution of the partial-SOI LDMOSFET with the silicon window under the drain is similar to that of standard junction isolation devices. ...

A 0.25m, four-layer-metal, 1.5-V, 600-MHz, fully depleted (FD) silicon-on-insulator (SOI) CMOS 64-bit ALPHA1 microprocessor integrating 9.66 million transistors on a 209-mm silicon die has been developed leveraging the existing bulk design. FD-SOI technology is used because it has better immunity for dynamic leakage current than partially depleted SOI in highspeed dynamic circuits without body ...

This paper reviews the basic circuit issues of silicon-on-insulator (SOI) technology for metal-oxide-semiconductor (CMOS) circuits. The superior features of SOI in low power, high speed, high device density and the effect of floating body particularly in partial depletion (PD) SOI device are addressed. Analog and RF circuits are considered and their performances are compared with those reported...

An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...

With recent fast growth in the RF (Radio-Frequency) wireless communications market, the demand for high performance but low cost RF solutions is rising. Recent advances in SOI (Silicon on Insulator) and complementary metal oxide semiconductor (CMOS) processing, continuous scaling of gate length, and progress in silicon on insulator have stirred serious discussions on the suitability of metal-ox...

We present an numerical investigation of a planar waveguide surface plasmon resonance (SPR) sensor in silicon-oninsulator (SOI) for detecting a change in the imaginary part of the refractive index. By adding a thin adsorbed layer between the metal-analyte boundary it is found that an enhanced sensitivity of the sensor is obtained, suggesting the possibility of realizing a highly integrated and ...

We demonstrate the design, fabrication, and characterization of silicon photonic crystal cavities realized in a silicon on insulator (SOI) platform, operating at a wavelength of 4.4 μm with a quality factor of 13,600. Cavity modes are imaged using the technique of scanning resonant scattering microscopy. To the best of our knowledge, this is the first demonstration of photonic devices fabricate...

We report frequency conversion experiments in silicon-on-insulator (SOI) directional couplers. We demonstrate that the evanescent coupling between two subwavelength SOI waveguides is strongly dispersive and significantly modifies modulational instability (MI) spectra through the coupling induced group velocity dispersion (GVD). As the separation between two 380-nm-wide silicon photonic wires de...

An integrated spatially non-blocking 2x2 Banyan switch on silicon on insulator (SOI) is demonstrated. The device relying on thermally switched microring resonators has a footprint of less than 0.02 mm2 and shows negligible channel crosstalk. The presented novel switch topology features a high scalability for application in many-core interconnections for network on-chip architectures. Keywords-c...